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Apparatus and method for sputter etching

Assignee: International Business Machines Corp
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Filing: 1969-06-18
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Granted: 1971-11-02
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Expires: 1989-06-18
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Abstract

Abstract The object to be sputter etched is excited in a reduced atmosphere of inert gas by the application of an RF potential across a pair of electrodes, one of which supports the object and is capacitively coupled to the RF source. The improvement is a means to catch and retain material removed by the sputtering operation.

Inventors

  • 👤 Lawrence V Gregor
  • 👤 Leon I Maissel
  • 👤 Charles L Standley

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 16:04
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/34

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 23 words
The apparatus of claim 1 wherein said plurality of spaced fin members is comprised of a plurality of concentrically disposed cylindrical shaped fins.
Claim 2
Dependent Claim 23 words
The apparatus of claim 1 wherein said plurality of spaced fin members is comprised of a plurality of concentrically disposed frustoconically shaped fins.
Claim 3
Dependent Claim 42 words
The apparatus of claim 1 wherein said spaced fin members is electrically connected to said radiofrequency voltage and serves, at least in part, as the second electrode. 5 The sputter etching apparatus of claim 1 wherein said catcher means is the anode.
Claim 4
Dependent Claim 128 words
In a sputter etching apparatus including a vacuumtight chamber, a pair of electrodes in the chamber, one of which has a generally flat surface for supporting an object to be sputter etched, means for applying a voltage between the electrodes, the improvement comprising, a material catcher means positioned in spaced relation to the supported object surface and said electrode supporting said object to receive and hold material removed during etching to minimize reemission of material and to minimize contamination of the object being sputter etched, said catcher means having a flat support portion positioned in a plane generally parallel to said electrode for supporting an object, and a plurality of spaced fin members depending therefom positioned between said flat support portion and said electrode for supporting an object.
Claim 5
Dependent Claim 20 words
The sputter etching apparatus of claim 6 wherein said means for applying a voltage is a source of DC voltage.

References Cited (Backward Citations)

US3514391A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1974-11-01 1975-05-03 1975-11-02 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1978-11-01 1979-05-03 1979-11-02 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1982-11-01 1983-05-03 1983-11-02 $7700.00 Window Closed / Lapsed

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