Method for manufacturing semiconductor device with passivation film

Claim 1

A method for manufacturing a semiconductor device with a passivation film according to claim 1, wherein the formation of said mixed layer is attained by depositing on the surface layer of said deposited silicon oxide film phosphorus oxide from its vapor phase at a temperature no higher than 900* C. and thereafter making a reaction between said surface layer and the deposited phosphorus oxide at a temperature no higher Than 900* C.

Claim 4

A method for manufacturing a semiconductor with having a passivation film comprising the steps of depositing on a major surface of a semiconductor substrate silicon oxide from vapor phase at a temperature no higher than about 900* C. thereby to form a silicon oxide film; depositing on the surface layer of said silicon oxide film phosphorus oxide from an oxidizing atmosphere containing phosphorus at no higher than about 900* C.; and making a reaction between said deposited phosphorus oxide and said surface layer at a temperature no higher than 900* C. for a prescribed time thereby to form in the surface layer of said silicon oxide film a mixed layer of phosphorus oxide and silicon oxide such that a surface layer rich in phosphorus oxide and having a thickness of no more than about 400 A. is formed in the surface of said mixed layer.

Claim 9

A method for manufacturing a semiconductor device with a passivation film comprising the steps of preparing a silicon semiconductor substrate of one conductivity-type having a major surface; forming on said major surface a first oxide film by the thermal growth method selectively; introducing selectively an impurity determining the second conductivity-type in said major surface with said oxide film as a mask thereby to form a region of second conductivity type in said major surface and obtain a PN-junction between said substrate and said region of second conductivity-type such that the PN-junction terminates in said major surface of said substrate; removing said first oxide film entirely thereby to expose said major surface; forming on said exposed major surface a second oxide film by the pyrolytic reaction of silicon compounds so as to cover said PN-junction; depositing phosphorus oxide on the surface of said second oxide film from an oxydizing atmosphere containing phosphorus at a temperature no higher than 900* C.; and making a reaction between said deposited phosphorus oxide and the surface layer of said second silicon oxide thereunder at a temperature no higher than 900* C. thereby to form a mixed layer of phosphorus oxide and silicoN oxide in said surface layer in such a manner as to form a surface layer rich in phosphorus oxide and having a thickness no more than about 400 A. in the surface of said mixed layer.