Patent US3615939A successfully refreshed from Google Patents.
US3615939A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a lateral transistor
Assignee: Sprague Electric Co
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Filing: 1969-01-15
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Granted: 1971-10-26
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Expires: 1989-01-15
Abstract
Abstract The emitter is restricted to the lateral wall of a recess adjacent the collector. Undesirable flow of emitter current into the bulk of the base region is prevented by providing a nonconducting plug in the bottom of the recess. A common emitter DC current gain which is substantially larger than one is obtained by this construction.
Inventors
- 👤 William C Schneider
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 23:10
CPC Classifications
H; H10; H10D; H10D99/00; H10D10/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
27 words
The method of claim 1 wherein the step of forming a silicon oxide layer includes forming said layer on the lateral and planar surfaces of said recess.
Claim 2
Dependent Claim
30 words
The method of claim 2 wherein the step of etching is restricted to etching substantially the entire lateral surface only of said recesS and a ring-shaped collector surrounding said recess.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-10-25 | 1975-04-26 | 1975-10-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-10-25 | 1979-04-26 | 1979-10-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-10-25 | 1983-04-26 | 1983-10-26 | $7700.00 | Window Closed / Lapsed |