Abstract Ingots of high purity III-V semiconductor compositions are prepared by encapsulating the molten Group III element with a barrier material that is permeable to the vapors of the Group V element while being impermeable to contaminants inherent in the system such as silicon and the like. The synthesis of the composition may be carried out in a conventional vertical sealed quartz enclosure. A crucible containing the Group III element and a barrier material and the Group V element are disposed within the sealed enclosure. The barrier material acts as a permeable membrane for vapors of the Group V element and as an impermeable membrane, or getter, for contaminants inherent in the system. Thus, vapors of the Group V element is permitted to diffuse through the barrier layer to react with the molten Group III element to form the III-V composition to the exclusion of contaminants. Ingots of highly pure III-V compositions are prepared in this manner.
An improved method for preparing III-V semiconductor compositions according to claim 1 wherein said Group III element is selected from at least one of the group consisting of Al, Ga, and In and said Group V element is selected from at least one of the group consisting of P, As, Sb and Bi.
Claim 2
Dependent Claim
25 words
An improved method for preparing semiconductor compositions according to claim 1 wherein said group III element is Ga and said Group V element is As.
Claim 3
Dependent Claim
25 words
An improved method for preparing semiconductor compositions according to claim 1 wherein said Group III element is Ga and said Group V element is P.
Claim 4
Dependent Claim
25 words
An improved method for preparing semiconductor compositions according to claim 1 wherein said Group III element is In and said Group V element is As.
Claim 5
Dependent Claim
25 words
An improved method for preparing semiconductor compositions according to claim 1 wherein said Group III element is In and said Group V element is P.
Claim 6
Dependent Claim
27 words
An improved method for preparing semiconductor compositions according to claim 1 wherein said Group III elements are Ga and Al and said Group V element is As.
Claim 7
Dependent Claim
27 words
An improved method for preparing semiconductor compositions according to claim 1 wherein said Group III elements are Ga and A1 and said Group V element is P.
Claim 8
Dependent Claim
17 words
An improved method for preparing semiconductor compositions according to claim 1 wherein said barrier material is B2O3.
Claim 9
Dependent Claim
26 words
An improved method for preparing semiconductor compositions according to claim 1 wherein the pressure of said Group V element is maintained between 1 to 25 atmospheres.
Claim 10
Dependent Claim
25 words
An improved method for preparing semiconductor compositions according to claim 1 wherein the pressure of said Group V element is maintained at about 10 atmospheres.