Method for the synthesis and growth of high purity iii{14 v semiconductor compositions in bulk
Abstract
Abstract Ingots of high purity III-V semiconductor compositions are prepared by encapsulating the molten Group III element with a barrier material that is permeable to the vapors of the Group V element while being impermeable to contaminants inherent in the system such as silicon and the like. The synthesis of the composition may be carried out in a conventional vertical sealed quartz enclosure. A crucible containing the Group III element and a barrier material and the Group V element are disposed within the sealed enclosure. The barrier material acts as a permeable membrane for vapors of the Group V element and as an impermeable membrane, or getter, for contaminants inherent in the system. Thus, vapors of the Group V element is permitted to diffuse through the barrier layer to react with the molten Group III element to form the III-V composition to the exclusion of contaminants. Ingots of highly pure III-V compositions are prepared in this manner.
Inventors
- 👤 Samuel E Blum
- 👤 Richard J Chicotka
Bibliographic Details
Claims Analysis
Total Claims: 10References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1974-10-25 | 1975-04-26 | 1975-10-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-10-25 | 1979-04-26 | 1979-10-26 | $3760.00 | Window Closed / Lapsed |
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