Patent US3614560A successfully refreshed from Google Patents.
US3614560A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Improved surface barrier transistor
Assignee: International Business Machines Corp
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Filing: 1969-12-30
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Granted: 1971-10-19
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Expires: 1989-12-30
Abstract
Abstract A semiconductor device comprising in combination: a first zone of semiconductive material containing impurity atoms of the acceptor type; a contiguous second zone of semiconductive material containing a predetermined low concentration of impurity atoms of the donor type; a metal layer having an interface with said second zone; and a third zone of relatively highly conductive semiconductive material in contact with said metal layer and containing a high concentration of impurity atoms of either the donor or acceptor type. In a typical device in accordance with this invention the ''''first zone'''' is formed as a P+ diffusion area in the ''''second zone'''' which is of the Nconductivity type of silicon, the ''''metal'''' is platinum, the ''''third zone'''' is formed by P+ diffusion into a monocrystalline silicon wafer, and emitter, base and collector leads are in contact with said first, second and third zones, respectively.
Inventors
- 👤 Narasipur G Anantha
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 10:54
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/137; H10D99/00; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/142
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
125 words
A Schottky Barrier Collector Transistor having structure compatible with planar semiconductor technology comprising in combination: a. a first zone of semiconductor material containing impurity atoms of the acceptor type; b. a contiguous second zone of semiconductive material containing a predetermined low concentration of impurity atoms of the donor type; c. a thin embedded barrier metal layer having an interface with said second zone and forming a rectifying barrier junction with the second zone; and d. a third zone of relatively high-conductive semiconductive material in contact with said metal layer and containing a high concentration of impurity atoms of either the donor or acceptor type, said metal layer positioned between said second zone and said third zone and forming an ohmic contact with said third zone.
Claim 2
Dependent Claim
125 words
A Schottky Barrier Collector Transistor having structure compatible with planar semiconductor technology comprising in combination: a. a first zone of semiconductor material containing impurity atoms of the acceptor type; b. a contiguous second zone of semiconductive material containing a predetermined low concentration of impurity atoms of the donor type; c. a thin embedded barrier metal layer having an interface with said second zone and forming a rectifying barrier junction with the second zone; and d. a third zone of relatively high-conductive semiconductive material in contact with said metal layer and containing a high concentration of impurity atoms of either the donor or acceptor type, said metal layer positioned between said second zone and said third zone and forming an ohmic contact with said third zone.
Claim 3
Dependent Claim
19 words
A semiconductor device in accordance with claim 1 wherein the third zone contains impurity atoms of the donor type.
Claim 4
Dependent Claim
22 words
A semiconductor device in accordance with claim 1 wherein the second and third zones are composed of material of like conductivity types.
Claim 5
Dependent Claim
22 words
A semiconductor device in accordance with claim 1 wherein the second and third zones are composed of material of unlike conductivity types.
Claim 6
Dependent Claim
24 words
A semiconductor device in accordance with claim 1 wherein the third zone has a resistance of less than 2 X 10 2 Omega -cm.
Claim 7
Dependent Claim
17 words
A device according to claim 1 wherein the metal forming the metal layer is platinum or molybdenum.
Claim 8
Dependent Claim
15 words
A device according to claim 1 wherein the metal forming the metal layer is platinum.
Claim 9
Dependent Claim
30 words
A device according to claim 6 wherein the third zone has at least 1020 impurity atoms per cc. and a resistivity of less than 2 X 10 2 Omega -cm.
Claim 10
Dependent Claim
29 words
A device according to claim 6 wherein the second zone has less than about 1017 impurity atoms per cc. and a resistivity of about 0.07 to 5.0 Omega -cm.
Claim 11
Dependent Claim
13 words
A device according to claim 6 wherein the semiconductive material is monocrystalline silicon.
Claim 12
Dependent Claim
18 words
A device according to claim 6 wherein external contacts are made to said first, second and third zones.
Claim 13
Dependent Claim
19 words
A device according to claim 11 wherein the external contacts all extend from a single surface of said device.
References Cited (Backward Citations)
US3460003A
Cited
US3504242A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-10-18 | 1975-04-19 | 1975-10-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-10-18 | 1979-04-19 | 1979-10-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-10-18 | 1983-04-19 | 1983-10-19 | $7700.00 | Window Closed / Lapsed |