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US3609472A
Expired / Lapsed
US
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High-temperature semiconductor and method of fabrication
Assignee: Motorola Solutions Inc
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Filing: 1969-05-21
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Granted: 1971-09-28
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Expires: 1989-05-21
Abstract
Abstract A contact for a semiconductor device capable of withstanding environments comprising high-temperature treatment, chemical attack by silicon etchants, and high oxidation ambients, and a method of fabricating said contact. A bimetallic layer comprising an alloy of platinum and nickel is disposed upon the active regions of a semiconductor device, the metal layer being in electrical contact with the semiconductor device. A layer of platinum is provided atop the platinum-nickel layer and this in turn is protected by a covering layer of rhodium. A layer of gold is then placed upon the rhodium for external connection.
Inventors
- 👤 Robert F Bailey
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 12:33
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/46; H10P95/00
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
29 words
A combination of a semiconductor device and a high-temperature contact therefor as in claim 1 wherein said metal layer is comprised of sequential strata of platinum, rhodium and gold.
Claim 2
Dependent Claim
112 words
A combination of a semiconductor device and high-temperature contacts therefor, said combination comprising: a. a semicOnductor device having a top, bottom, and side surfaces, said semiconductor device having active regions being disposed upon respective surfaces thereof; b. a layer of a metal alloy of platinum and nickel being disposed upon each of said active regions of said semiconductor device; c. a metal layer of platinum being disposed upon each of said layers of metal alloy of platinum and nickel; d. a metal layer of rhodium being disposed upon each of said metal layers of platinum; and e. a layer of contact metal being disposed upon each of said metal layers of rhodium.
Claim 3
Dependent Claim
26 words
A combination of a semiconductor device and high-temperature contacts therefor as in claim 3 wherein said metal alloy is comprised of 30-40 percent platinum by volume.
Claim 4
Dependent Claim
34 words
A combination of a semiconductor device and high-temperature contacts therefor as in claim 3 wherein said metal alloy of platinum and nickel is disposed upon said active regions of said semiconductor device by sputtering.
Claim 5
Dependent Claim
20 words
A combination of a semiconductor device and high-temperature contacts therefor as in claim 3 wherein said contact metal is gold.
Claim 6
Independent Claim
87 words
A method for fabricating a contact on a semiconductor device comprising the steps of: a. providing a semiconductor device having a portion thereof adapted for making electrical contact thereto; b. disposing a bimetallic layer upon said portion of said semiconductor device; c. establishing upon said bimetallic layer a first metal layer comprising one of the components of said bimetallic layer; d. disposing a second metal layer of rhodium upon said first metal layer; and e. disposing a third metal layer of gold upon said second metal layer.
Claim 7
Dependent Claim
17 words
A method as in claim 7 wherein said bimetallic layer is an alloy of platinum and nickel.
Claim 8
Dependent Claim
21 words
A method as in claim 7 wherein said bimetallic layer is disposed upon said portion of said semiconductor device by sputtering.
Claim 9
Independent Claim
96 words
A method for fabricating a contact structure on a semiconductor device, comprising the steps of: a. providing a semiconductor device having a top, bottom, and side surfaces, said semiconductor device having active regions being disposed upon respective surfaces thereof; b. disposing upon said active regions a first metal layer comprising an alloy of platinum and nickel; c. establishing upon said first metal layer a second metal layer of platinum; d. disposing upon said second metal layer a third metal layer of rhodium; and e. disposing upon said third metal layer a fourth metal layer of gold.
Claim 10
Dependent Claim
21 words
A method as in claim 15 wherein said metal alloy of platinum and nickel is 30-40 percent platinum by atomic percent.
Claim 11
Dependent Claim
23 words
A method as in claim 15 wherein said first metal layer is disposed upon said active regions of said semiconductor device by sputtering.
Claim 12
Dependent Claim
84 words
A combination of a semiconductor device and a high-temperature contact therefor, said combination comprising: a. a semiconductor device having a portion of a surface thereof adapted for making electrical contact thereto; b. a bimetallic alloy layer of platinum and nickel disposed upon said portion of said surface of said semiconductor device; c. a metal layer disposed upon said bimetallic alloy layer, said metal layer having one of the components of said bimetallic alloy layer; and d. protective metal means disposed upon said metal layer.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-09-27 | 1975-03-29 | 1975-09-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-09-27 | 1979-03-29 | 1979-09-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-09-27 | 1983-03-29 | 1983-09-28 | $7700.00 | Window Closed / Lapsed |