Abstract The invention describes a method of producing fine structures, preferably those consisting of a metal coating, upon semiconductor surfaces. More particularly, the invention relates to a method of producing metal layers upon semiconductor surfaces thus providing contact areas on semiconductor circuit components. The metal coating covers the entire area of the surface to be processed. According to conventional planar technique, the coated area is subsequently covered by a suitable photovarnish upon which the desired structure or configuration is impressed by photographic exposure and development of the photovarnish. The nonexposed areas of the metal coating are thereafter dissolved. According to the present invention, the metal deposition, initially covering the entire area of the surface to be processed, is given an addition of at least one metal which reduces the etching time required for subsequently eliminating the area portions not covered by the etching mask. This also stabilizes the semiconductor surface.
The method of claim 1, wherein the deposited metal precipitation has a layer thickness of about 1 Mu m.
Claim 2
Dependent Claim
19 words
The method of claim 1, wherein the deposited metal precipitation has a layer thickness of about 0.5 Mu m.
Claim 3
Dependent Claim
25 words
The method of claim 1, wherein the metal layer is precipitated upon the semiconductor surface by vaporization in vacuum at 5 to 8.10 6 torr.
Claim 4
Dependent Claim
21 words
The method of claim 1, wherein an alloy of the metals to be vaporized is used as the metal vapor source.
Claim 5
Dependent Claim
15 words
The method of claim 1, wherein the metal precipitation is effected by vaporization in vacuum.
Claim 6
Dependent Claim
28 words
The method of claim 1, wherein the metal precipitation is effected by vaporization in vacuum and the temperature of the vapor source is adjusted to about 900* C.
Claim 7
Dependent Claim
15 words
The method of claim 6, wherein the rate of vapor deposition is approximately 30 A./sec.