US3607378A
Expired / Lapsed
US
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Technique for depositing silicon dioxide from silane and oxygen
Assignee: Texas Instruments Inc
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Filing: 1969-10-27
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Granted: 1971-09-21
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Expires: 1989-10-27
Abstract
Abstract A pinhole-free film of silicon dioxide is deposited on a substrate by the vapor phase oxidation of silane in dilute admixture with an inert carrier gas such as helium, for example. By maintaining a high flow rate of helium to carry the silane and oxygen upward in contact with an inverted substrate, in combination with an oxygen flow rate appreciably higher than that of silane, a high rate of silicon dioxide deposition is assured with a minimum of quartz smoke, and without excessive premature oxidation of the silane.
Inventors
- 👤 Edward M Ruggiero
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 07:09
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/45565; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C23C16/45502; C23C16/45504; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4584; H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
36 words
A process as defined by claim 1 wherein said inert gas comprises helium passed at a flow rate above 2 liters per minute in combination with a flow rate of silane below 15 cc. per minute.
Claim 2
Dependent Claim
36 words
The process as described in claim 2 wherein said silane flow is approximately 7 cc. per minute, said helium flow is approximately 4.5 liters per minute, and said oxygen flow is approximately 200 cc. per minute.
Claim 3
Dependent Claim
200 words
In a process for the fabrication of a semiconductor silicon device, the improved method of depositing a silicon dioxide film on a surface thereof, said film having a thickness as small as 2, 000 A., and having a pinhole density as low as 1 pinhole per 50, 000 sq. mils, comprising the steps of: a. placing a thermally sensitive silicon wafer substrate in a reaction chamber so that said surface is facing downward; b. heating said substrate to an elevated temperature; c. introducing silane and helium into said chamber below said substrate, at a rate of helium above 2 liters per minute and a flow rate of silane below 15 cc. per minute; d. introducing oxygen into said chamber below said substrate, at a rate which exceeds the flow rate of silane; e. directing said helium, silane and oxygen in contact with said heated substrate to deposit said silicon dioxide film on said downward-facing surface; f. maintaining the combined flow rates of helium, silane and oxygen at a level sufficient to sweep quartz smoke past the substrate; and g. withdrawing the off gases and quartz smoke from the reaction chamber through a peripheral opening in the vicinity of the substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-09-20 | 1975-03-22 | 1975-09-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-09-20 | 1979-03-22 | 1979-09-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-09-20 | 1983-03-22 | 1983-09-21 | $7700.00 | Window Closed / Lapsed |