US3607054A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for extending the growth of vapor-liquid-solid grown crystals
Assignee: United States Department of the Army
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Filing: 1969-05-05
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Granted: 1971-09-21
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Expires: 1989-05-05
Abstract
Abstract By maintaining the desired temperature gradient in the molten solvent as the crystal grows and by replenishing the solvent lost by segregation into the growing crystal, a continuous filament crystal is formed. As the crystal is formed it is pulled from the formation area at its speed of growth. A vaporous compound containing the solvent element furnishes a vapor containing the solvent. The solvent vapor condenses on the molten solvent to replenish the solvent lost by segregation into the growing crystal.
Inventors
- 👤 Raymond W Conrad
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 16:59
CPC Classifications
C; C30; C30B; C30B15/00; C30B15/02; C30B11/00; C30B11/04; C30B11/08; C30B11/12; C30B15/06
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
52 words
A process as set forth in claim 1 wherein said temperature is maintained by translating said continuous filament crystal in a direction opposite said continuous filament crystal growth and at the rate of growth of said continuous filament crystal to thereby cause said molten drop to maintain a predetermined temperature gradient therein.
Claim 2
Dependent Claim
21 words
A process for growing a single crystal filament as set forth in claim 1 wherein said molten solvent drop is iron.
Claim 3
Dependent Claim
31 words
A process for growing a single crystal filament as set forth in claim 1 wherein said substrate has a seed crystal of silicon carbide thereon upon which said filament crystal grows.
Claim 4
Dependent Claim
21 words
A process for growing a single crystal filament as set forth in claim 1 wherein said selected element is silicon carbide.
Claim 5
Dependent Claim
28 words
A process for growing a single crystal filament as set forth in claim 5, wherein said vapor containing said molten solvent is the decomposed products of iron pentacarbonyl.
Claim 6
Dependent Claim
30 words
A process for growing a single crystal filament as set forth in claim 1 wherein said substrate has a seed crystal of silicon thereon upon which said filament crystal grows.
Claim 7
Dependent Claim
20 words
A process for growing a single crystal filament as set forth in claim 7, wherein said selected element is silicon.
Claim 8
Dependent Claim
27 words
A process for growing a single crystal filament as set forth in claim 8, wherein said vapor containing molten solvent is the decomposed products of iron pentacarbonyl.
References Cited (Backward Citations)
US3053635A
Cited
US3232745A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-09-20 | 1975-03-22 | 1975-09-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-09-20 | 1979-03-22 | 1979-09-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-09-20 | 1983-03-22 | 1983-09-21 | $7700.00 | Window Closed / Lapsed |