Patent US3604953A successfully refreshed from Google Patents.
US3604953A
Expired / Lapsed
US
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Regenerative switching circuits using the charge storage characteristics of pn junctions to perform the switching and timing functions
Assignee: AT&T Inc
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Filing: 1969-05-15
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Granted: 1971-09-14
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Expires: 1989-05-15
Abstract
Abstract A regenerative switching circuit having two active switching elements uses the charge storage and current limiting capabilities of a PN junction to perform the switching and timing functions. When the circuit is in one state, a forward current flows through a PN junction associated with one of the switching elements, and charge is stored near the junction. When the circuit is switched to its other state, a reverse current flows through the junction for a predetermined period until the stored charge is depleted, whereupon the current is blocked and the circuit reverts to its original state.
Inventors
- 👤 Philip M Carmody
- 👤 Dennis J Lynes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:27
CPC Classifications
H; H03; H03K; H03K3/00; H03K3/02; H03K3/33
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
160 words
A regenerative circuit having first and second states comprising: a first switching element, said first switching element comprising a first transistor and a second transistor connected in a first conduction path and a third transistor connected in a second conduction path, said second conduction path connecting to said second transistor; a second switching element, said second switching element comprising a fourth transistor connected in a third conduction path, said third conduction path connecting to said first traNsistor, and said fourth transistor connecting to said second conduction path; wherein a PN junction in said second transistor having a long minority carrier lifetime stores charge in response to a forward current through said PN junction when said regenerative circuit is in said first state; and wherein said PN junction allows a reverse current to flow through said PN junction for a predetermined period of time when said regeneration circuit is in said second state to maintain said circuit in said second state.
Claim 2
Dependent Claim
190 words
A regenerative circuit having first and second states comprising: a first voltage source; first and second switching elements connected to said first source; wherein said first switching element comprises first and second transistors connected in series in a first conduction path and said second switching element comprises a third transistor connected into a second conduction path, said first and second conduction paths being connected in parallel to said first voltage source; a semiconductor element with PN junction having a long minority carrier lifetime is connected in said first conduction path between said first and second transistors and poled in a forward direction with respect to said first voltage source, said semiconductor element storing charge in response to a forward current through said PN junction when said first switching element is in a conducting state during said first state and said semiconductor element allowing a reverse current to flow through said PN junction for a predetermined period of time when said circuit is in said second state; and wherein said second switching element is maintained in a conducting state during said second state by said reverse current through said PN junction.
Claim 3
Dependent Claim
33 words
A regenerative circuit as in claim 3 additionally comprising a second voltage source connected so as to reverse bias said diode and connected through said diode to the base of said third transistor.
Claim 4
Dependent Claim
29 words
A regenerative circuit as in claim 4 comprising third and fourth conduction paths connected respectively between the bases of said first and second transistors and said second conduction path.
Claim 5
Dependent Claim
52 words
A regenerative circuit as in claim 4 in which said semiconductor element is a diode, said regenerative circuit comprising a second diode having a long minority carrier lifetime connected between said second voltage source and said second conduction path and poled in a forward direction with respect to said second voltage source.
Claim 6
Dependent Claim
29 words
A regenerative circuit as in claim 6 comprising third and fourth conduction paths connected respectively between the bases of said first and second transistors and said second conduction path.
Claim 7
Dependent Claim
73 words
A regenerative circuit as in claim 6 in which: said second diode having a long minority carrier lifetime is connected in a third conduction path between said second voltage source and said second conduction path; and the base of said second transistor is connected by a fourth conduction path to said second conduction path, and the base of said first transistor is connected by a fifth conduction path to said third conduction path.
Claim 8
Dependent Claim
175 words
A regenerative circuit having first and second states comprising: a first voltage source; first and second switching elements connected to said first voltage source; said first switching element comprising a first conduction path connected to said first voltage source with a first transistor serially connected therein, said first element also including a second conduction path with a third transistor connected therein, said second conduction path being connected between said first voltage source and the base of said second transistor said second switching element including a third conduction path connected to said first voltage source with a fourth transistor connected therein, the base of said fourth transistor being connected to said second conduction path; wherein a PN junction in said first trAnsistor stores charge in response to a forward current through said PN junction when said first switching element is conducting in said first state, and said first transistor allows a reverse current to flow through said PN junction for a predetermined period of time to maintain said second switching element conducting in said second state.
Claim 9
Dependent Claim
19 words
A regenerative circuit as in claim 9 wherein said PN junction comprises the collector-base junction of said second transistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-09-13 | 1975-03-15 | 1975-09-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-09-13 | 1979-03-15 | 1979-09-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-09-13 | 1983-03-15 | 1983-09-14 | $7700.00 | Window Closed / Lapsed |