Neuristor element employing bulk effect semiconductor devices
Abstract
Abstract A neuristor element is described which is formed of a pair of Gunn effect elements using bulk negative resistance effect materials capable of forming high electric field layers in the elements upon the application of electric field intensities of preselected values within the materials. The elements are so coupled to one another that the initiation of a high electric field layer in one of them acts to inhibit the formation of such layer in the other element by effectively lowering the electric field intensity in the other element well below the threshold level necessary to form such high electric field layers. Several embodiments are described with one using capacitive coupling and another resistive or direct coupling.
Inventors
- 👤 Hisayoshi Yanai
- 👤 Toshiaki Ikoma
- 👤 Takayuki Sugeta
- 👤 Yasuo Matsukura
- 👤 Kuniichi Ohta
Bibliographic Details
Claims Analysis
Total Claims: 1References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1974-08-02 | 1975-02-01 | 1975-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-08-02 | 1979-02-01 | 1979-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-08-02 | 1983-02-01 | 1983-08-03 | $7700.00 | Window Closed / Lapsed |