Pointed gate semiconductor device

Claim 2

An MOS-type insulated gate field effect semiconductor device, comprising: a. a semiconductor body composed of N-type semiconductor material; b. two separate electrically conductive bodies composed of P-type semiconductor material, said two bodies located contiguous to said semiconductor body and each having a pointed end, with said pointed ends being adjacent to each other, said two bodies forming a pointed source electrode and a pointed drain electrode; c. a body of electrically insulative material located on the semiconductor body intermediately between said pointed source and drain electrodes; and d. at least one flat electrically conductive metal body located upon said body of electrically insulative material in an intermediate position between said pointed source electrode and said pointed drain electrode, said flat electrically conductive body forming a pointed gate electrode means for applying a concentrated control potential across said semiconductor body in the region between said pointed source and said pointed drain electrodes, the longitudinal axis of the pointed gate electrode being perpendicular to the longitudinal axis of the pointed source and drain electrodes.

Claim 3

A thin film-type insulated gate field effect semiconductor device, comprising: a. a substrate of insulative material; b. two separate electrically conductive flat metal bodies disposed upon said substrate of insulative material, each having a pointed end, with said pointed ends being adjacent to each other, said two bodies forming a pointed source electrode and a pointed drain electrode; c. a semiconductor body composed of semiconductor material disposed on said substrate and on said separate electrically conductive flat metal bodies; d. a body composed of electrically insulative material located upon said semiconductor bOdy; and e. at least one flat electrically conductive body having a pointed end located in an intermediate position between said pointed source electrode and said pointed drain electrode upon said body composed of electrically insulative material, said flat electrically conductive body forming a pointed gate electrode means for applying a concentrated control potential across said semiconductor body in the region between said pointed source and pointed drain electrodes, the longitudinal axis of the pointed gate electrode being perpendicular to the longitudinal axis of said pointed source and drain electrodes.

Claim 4

A thin film type insulated gate field effect semiconductor device circuit, comprising: a. a substrate of insulative material; b. two separate electrically conductive flat metal bodies disposed upon said substrate of insulative material, each having a pointed end, with said pointed ends being adjacent to each other, said two bodies forming a pointed source electrode and a pointed drain electrode; c. a semiconductor body composed of semiconductor material disposed on said substrate and on said separate electrically conductive flat metal bodies; d. a body composed of electrically insulative material located upon said semiconductor body; and e. at least one flat electrically conductive body having a pointed end located in an intermediate position between said pointed source electrode and said pointed drain electrode upon said body composed of electrically insulative material, said flat electrically conductive body forming a pointed gate electrode means for applying a concentrated control potential across said semiconductor body in the region between said pointed source and pointed drain electrodes, the longitudinal axis of the pointed gate electrode being perpendicular to the longitudinal axis of said pointed source and drain electrodes; f. a gate voltage means connected between said pointed gate electrode means and said pointed source and drain electrodes for producing a concentrated control potential in the semiconductor material between said pointed source and drain electrodes; and g. a DC source-drain voltage means, and a load resistor connected in series circuit between said pointed source electrode and said pointed drain electrode for passing a current through said semiconductor material between said pointed source and drain electrodes.

Claim 5

A coplanar-type insulated gate field effect semiconductor device circuit, comprising: a. a substrate of insulative material; b. two separate electrically conductive flat metal bodies disposed upon said substrate of insulative material, each having a pointed end, with said pointed ends being adjacent to each other, said two bodies forming a pointed source electrode and a pointed drain electrode; c. at least one flat electrically conductive metal body having a pointed end located in an intermediate position upon said substrate of insulative material between said pointed source electrode and said pointed drain electrode, said flat electrically conductive body forming a pointed gate electrode means for applying a concentrated control potential in the region between said pointed source and said pointed drain electrodes, the longitudinal axis of the pointed gate electrode being perpendicular to the longitudinal axis of said pointed source and drain electrodes; d. a body of electrically insulative material disposed upon said pointed gate electrode; e. a semiconductor body composed of semiconductor material disposed on said substrate of insulative material and in electrical contact with said pointed source and drain electrodes and on said body of electrically insulative material in insulative contact with said pointed gate electrode; f. a gate voltage means connected between said pointed gate electrode means and said pointed source and drain electrodes for producing a concentrated control potential in the semiconductor material between said pointed source and dRain electrodes; and g. a DC source-drain voltage means and load resistor connected in series circuit between said pointed source electrode and said pointed drain electrode for passing a current through the semiconductor material between said pointed source and drain electrodes.

Claim 6

A MOS-type insulated gate field effect semiconductor device circuit, comprising: a. a semiconductor body composed of N-type semiconductor material; b. two separate electrically conductive bodies composed of P-type semiconductor material, said two bodies located contiguous to said semiconductor body and each having a pointed end, with said pointed ends being adjacent to each other, said two bodies forming a pointed source electrode and a pointed drain electrode; c. a body of electrically insulative material located on the semiconductor body intermediately between said pointed source and drain electrodes; d. at least one flat electrically conductive metal body located upon said body of electrically insulative material in an intermediate position between said pointed source electrode and said pointed drain electrode, said flat electrically conductive body forming a pointed gate electrode means for applying a concentrated control potential across said semiconductor body in the region between said pointed source and said pointed drain electrodes, the longitudinal axis of the pointed gate electrode being perpendicular to the longitudinal axis of the pointed source and drain electrodes; e. a gate voltage means connected between said pointed gate electrode means and said pointed source and drain electrode, for producing a concentrated control potential in the portion of said semiconductor material intermediately between said pointed source electrode and said pointed drain electrode; and f. a DC source-drain voltage means and a load resistor connected in series circuit between said pointed source electrode and said pointed drain electrode, for passing a DC current through the semiconductor material between said pointed source and drain electrodes.

Claim 7

A thin film-type insulated gate field effect semiconductor device mixer circuit, comprising: a. a substrate of insulative material; b. two separate electrically conductive flat metal bodies disposed upon said substrate of insulative material, each having a pointed end, with said pointed ends being adjacent to each other, said two bodies forming a pointed source electrode and a pointed drain electrode; c. a semiconductor body composed of semiconductor material disposed on said substrate and on said separate electrically conductive flat metal bodies; d. a body composed of electrically insulative material located upon said semiconductor body; e. two flat electrically conductive bodies each having a pointed end located in an intermediate position between said pointed source electrode and said pointed drain electrode upon said body composed of electrically insulative material, said flat electrically conductive bodies forming two pointed gate electrodes opposite each other for applying a concentrated control potential across said semiconductor body in the region between said pointed source and pointed drain electrodes, the longitudinal axis of the pointed gate electrode being perpendicular to the longitudinal axis of said pointed source and drain electrodes; f. a first AC gate voltage means, having a first frequency, connected between a first pointed gate electrode and said pointed source electrode and a second AC gate voltage means, having a second frequency, connected between a second pointed gate electrode and said pointed source electrode; and g. a DC source-drain voltage means connected between said pointed source electrode and said pointed drain electrode for passing a varying current through said semiconductor material between said pointed source and drain electrodes, which variation is in response to the difference in the frequency between the first and second gate voLtage means.

Claim 8

A thin film-type insulated gate field effect semiconductor device ''''OR'''' logic circuit, comprising: a. a substrate of insulative material; b. two separate electrically conductive flat metal bodies disposed upon said substrate of insulative material, each having a pointed end, with said pointed ends being adjacent to each other, said two bodies forming a pointed source electrode and a pointed drain electrode; c. a semiconductor body composed of semiconductor material disposed on said substrate and on said separate electrically conductive flat metal bodies; d. a body composed of electrically insulative material located upon said semiconductor body; e. two flat electrically conductive bodies having a pointed end located opposite each other in an intermediate position between said pointed source electrode and said pointed drain electrode upon said body composed of electrically insulative material, said flat electrically conductive bodies forming two pointed gate electrodes for applying a concentrated control potential across said semiconductor body in the region between said pointed source and pointed drain electrodes, the longitudinal axis of the pointed gate electrode being perpendicular to the longitudinal axis of said pointed source and drain electrodes; f. a first DC gate voltage means and first switch connected between a first pointed gate electrode and said pointed source electrode, and a second DC gate voltage means and second switch connected between a second pointed gate electrode and said pointed source electrode; and g. a DC source-drain voltage means connected between said pointed source electrode and said pointed drain electrode for passing a current through the semiconductor material between said pointed source and drain electrodes, when either said first switch for said second switch is closed.

Claim 9

A thin film-type insulated gate field effect semiconductor device ''''AND'''' logic circuit, comprising: a. a substrate of insulative material; b. two separate electrically conductive flat metal bodies disposed upon said substrate of insulative material, each having a pointed end, with said pointed ends being adjacent to each other, said two bodies forming a pointed source electrode and a pointed drain electrode; c. a semiconductor body composed of semiconductor material disposed on said substrate and on said separate electrically flat metal bodies; d. a body composed of electrically insulative material located upon said semiconductor body; e. two flat electrically conductive bodies having a pointed end located in an intermediate position between said pointed source electrode and said pointed drain electrode upon said body composed of electrically insulative material, said flat electrically conductive bodies forming two pointed gate electrodes that are opposite each other for applying a concentrated control potential across said semiconductor body in the region between said pointed source and pointed drain electrodes, the longitudinal axis of the pointed gate electrode being perpendicular to the longitudinal axis of said pointed source and drain electrodes; f. a DC gate voltage means, a first switch and a second switch connected in series between a first pointed gate electrode and a second pointed gate electrode; and g. a DC voltage means connected between said pointed source electrode and said pointed drain electrode for passing a current through the semiconductor material between said pointed source and drain electrodes, when both said first switch and said second switch are closed.

Claim 10

A split pointed drain electrode-type insulated gate field effect semiconductor device, comprising: a. a substrate of insulative material; b. three separate electrically conductive flat metal bodies disposed upon said substrate of insulative material, each having a pointed end, with two of said pointed ends being adjacent to the other, said three bodies Forming a pointed source electrode and a split pointed drain electrode; c. a semiconductor body composed of semiconductor material disposed on said substrate and on said separate electrically conductive flat metal bodies; d. a body composed of electrically insulative material located upon said semiconductor body; and e. at least one flat electrically conductive body having a pointed end located in an intermediate position between said pointed source electrode and said pointed drain electrode upon said body composed of electrically insulative material, said flat electrically conductive body forming pointed gate electrode means for applying a concentrated control potential across said semiconductor body in the region between said pointed source electrode and said split pointed drain electrode, the longitudinal axis of the pointed gate electrode being perpendicular to the longitudinal axis of said pointed source electrode and said split pointed drain electrode.