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US3592708A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of making raster pattern magnetoresistors

Assignee: United States Department of the Navy
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Filing: 1968-07-26
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Granted: 1971-07-13
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Expires: 1988-07-26
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Abstract

Abstract A TECHNIQUE FOR CREATING A RASTER PATTERN MAGNETORESISTOR DEVICE FROM AN ELECTRON BEAM-RECRYSTALLIZED INSB FILM BY EMPLOYING A PHOTOLITHORGAPHIC PROCESS TO ETCH OUT OF THE INSB FILM A SUITABLE PATTERN ON WHICH MICRONSIZE INDIUM OR COPPER STRIPES ARE LATER ETCHED OUT OF A SUPERPOSED METALLIC FILM APPLIED ON THE INSB BY VACUUM DEPOSITION. THE RASTER PATTERN MAGNETORESISTOR DEVICE IS A REISTOR, WHOSE INITIAL RESISTANCE IN ZERO MAGNETIC FIELD IS BETWEEN 10 AND 1000 OHMS, AND WHOSE RESISTANCE INCREASES WITH AN APPLIED MAGNETIC FIELD, REACHING A VALUE GREATER THAN A FACTOR OF 10 OF THE INITIAL RESISTANCE IN A MAGNETIC FIELD OF 10K OE.

Inventors

  • 👤 David A Collins
  • 👤 Harry H Wieder

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 17:22
CPC Classifications
H; H10; H10N; H10N50/00; H10N50/10; Y; Y10; Y10S; Y10S438/00; Y10S438/93

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1974-07-12 1975-01-11 1975-07-13 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1978-07-12 1979-01-11 1979-07-13 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1982-07-12 1983-01-11 1983-07-13 $7700.00 Window Closed / Lapsed

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