Patent US3589939A successfully refreshed from Google Patents.
US3589939A
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Method of making a semiconductor device
Assignee: Hitachi Ltd
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Filing: 1967-10-16
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Granted: 1971-06-29
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Expires: 1987-10-16
Abstract
Abstract A METHOD OF MAKING A STABILIZED SEMICONDUCTOR DEVICE, WHEREIN A SEMICONDUCTOR SUBSTRATE COVERED WITH AN INSULATING FILM SUCH AS A SILICON OXIDE FILM IS HEATED TO A TEMPERATURE NOT BREAKING THE COMPONENTS THEREOF AND AN ELECTRODE METAL E.G. ALUMINUM, ENDOWED WITH A PREDETERMINED ELECTRIC POTENTIAL WITH RESPECT TO THE SUBSTRATE, IS EVAPORATED TO DEPOSIT AN ELECTRODE METAL LAYER ON THE SURFACE OF THE FILM.
Inventors
- 👤 Minoru Ono
- 👤 Yoshio Tanaka
- 👤 Seiichi Iwamatsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:22
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10D; H10D99/00; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/91
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-06-28 | 1974-12-28 | 1975-06-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-06-28 | 1978-12-28 | 1979-06-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-06-28 | 1982-12-28 | 1983-06-29 | $7700.00 | Window Closed / Lapsed |