Patent US3587000A successfully refreshed from Google Patents.
US3587000A
Expired / Lapsed
US
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Semiconductive circuit
Assignee: International Standard Electric Corp
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Filing: 1968-11-27
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Granted: 1971-06-22
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Expires: 1988-11-27
Abstract
Abstract This is a semiconductor device consisting of a material which exhibits high field instability effects when a potential which exceeds a critical value is applied across the device. Electronic means to vary the conductivity profile along the domain path is provided by having rectifying junctions along the side of the device to vary the minority carrier injections from one or more of the localized PN-junctions.
Inventors
- 👤 John Stuart Heeks
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 13:25
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; H; H10; H10N; H10N80/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
17 words
A semiconductor device as claimed according to claim 1 wherein the body of semiconductive material is n-type.
Claim 2
Dependent Claim
18 words
A semiconductor device as claimed according to claim 2 wherein the body of semiconductive material is gallium arsenide.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-06-21 | 1974-12-21 | 1975-06-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-06-21 | 1978-12-21 | 1979-06-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-06-21 | 1982-12-21 | 1983-06-22 | $7700.00 | Window Closed / Lapsed |