US3585520A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Device for generating pulsed light by stimulated emission in a semiconductor triggered by the formation and transit of a high field domain
Assignee: Hitachi Ltd
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Filing: 1968-09-11
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Granted: 1971-06-15
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Expires: 1988-09-11
Abstract
Abstract A device for generating pulsed light comprising a semiconductor element including a PN junction therein capable of inducing Gunn oscillation and radiating laser light, a negative electrode attached to a portion of the N-type region of the semiconductor element, and a positive electrode attached to a portion of the Ptype region of the semiconductor element.
Inventors
- 👤 Hisayoshi Yanai
- 👤 Masatoshi Migitaka
- 👤 Hiroshi Kodera
- 👤 Toshiaki Ikoma
- 👤 Takayuki Sugeta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 02:03
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
123 words
A device for generating pulsed light comprising: a semiconductor element having therein a PN junction for laser emission, a pair of opposite surfaces of said semiconductor element being parallel to each other, smooth, and perpendicular to said PN junction, said semiconductor element having a bulk negative resistance effect; a positive electrode provided at a P-type region of said semiconductor element; a negative electrode provided at an N-type region of said semiconductor element; and a power supply connected between said positive electrode and said negative electrode and capable of supplying said PN junction with an electric current sufficient to cause said PN junction to emit laser light and supplying said semiconductor element with an electric field sufficient to generate a high field domain therein.
Claim 2
Independent Claim
150 words
A device for generating pulsed light comprising: a semiconductor element having therein a PN junction for laser emission a pair of opposite surfaces of said semiconductor element being parallel to each other, smooth, and perpendicular to said PN junction, said semiconductor element having bulk negative resistance effect; a positive electrode provided at a P-type region of said semiconductor element; a negative electrode provided at an N-type region of said semiconductor element; a third electrode provided at said N-type region of said semiconductor element; a first power supply connected between said positive electrode and said negative electrode and capable of supplying said PN junction with an electric current sufficient to allow said PN junction to emit laser light; and a second power supply connected between said negative electrode and said third electrode and capable of supplying said semiconductor element with an electric field sufficient to generate a high field domain therein.
Claim 3
Dependent Claim
38 words
A device for generating pulsed light according to claim 3, wherein said first power supply is further capable of supplying said semiconductor element with an electric field sufficient to maintain said high field domain in said semiconductor element.
Claim 4
Independent Claim
172 words
A device for generating pulsed light comprising: a semiconductor element having therein a PN junction for laser emission, a pair of opposite surfaces of said semiconductor element being parallel to each other, smooth, and perpendicular to said PN junction, said semiconductor element having bulk negative resistance effect; a positive electrode provided at a P-type region of said semiconductor element; a negative electrode provided at an N-type region of said semiconductor element; a third electrode provided at said N-type region of said semiconductor element; a power supply connected between said positive electrode and said negative electrode and capable of supplying said PN junction with an electric current sufficient to cause said PN junction to emit laser light, supplying the portion of said semiconductor element between said negative electrode and said third electrode with an electric field sufficient to generate a high field domain therein, and supplying said semiconductor element with an electric field sufficient to maintain said high field domain therein; and switching means connected between said negative electrode and said third electrode.
Claim 5
Independent Claim
209 words
A device for generating pulsed light comprising: a semiconductor element having therein a PN junction for laser emission, a pair of opposite surfaces of said semiconductor element being parallel to each other, smooth, and perpendicular to said PN junction, said semiconductor element having bulk negative resistance effect; a positive electrode provided at a P-type region of said semiconductor element; a negative electrode provided at an N-type region of said semiconductor element; a third electrode provided at said N-type region of said semiconductor element; a fourth electrode provided at said N-type region of said semiconductor element and in the vicinity of said positive electrode; a first power supply connected between said positive electrode and said negative electrode and capable of supplying the portion of said semiconductor element between said negative electrode and said third electrode with an electric field sufficient to generate a high field domain therein, and supplying said semiconductor element with an electric field sufficient to maintain said high field domain therein; a second power supply connected between said positive electrode and said fourth electrode and capable of supplying said PN junction with an electric current sufficient to cause said PN junction to emit laser light; and switching means connected between said negative electrode and said third electrode.
Claim 6
Dependent Claim
63 words
A device for generating pulsed light according to claim 1, wherein said means for intermittently generating a high field domain is a means for inducing Gunn oscillation in said portion of said semiconductor element between said positive and said negative electrodes, whereby the emission of laser light will be interrupted during the presence of said high field domain generated during said Gunn oscillation.
Claim 7
Dependent Claim
29 words
A device for generating pulsed light according to claim 7, wherein said Gunn oscillation inducing means comprises a power supply connected between said positive electrode and said negative electrode.
References Cited (Backward Citations)
US3245002A
Cited
US3344365A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-06-14 | 1974-12-14 | 1975-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-06-14 | 1978-12-14 | 1979-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-06-14 | 1982-12-14 | 1983-06-15 | $7700.00 | Window Closed / Lapsed |