US3585465A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Microwave power transistor with a base region having low-and-high-conductivity portions
Assignee: RCA Corp
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Filing: 1970-02-20
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Granted: 1971-06-15
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Expires: 1990-02-20
Abstract
Abstract The device includes a plurality of oblong base lobes radially disposed about a central collector portion, with a thin emitter region centrally diffused within each oblong base lobe. The base region of each device also includes a high conductivity region comprising an outer peripheral ring around the lobes and wedgeshaped portions which taper inward towards the central portion and between adjacent oblong base lobes, providing good current injection uniformity along the emitter-base junction. Emitter interconnection is made by means of a metal film disposed over an oxide layer having apertures exposing the emitter region; base interconnection is made by means of a metal ring disposed around the outer peripheral ring of the high conductivity region.
Inventors
- 👤 William Paul Imhauser
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 13:15
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/90; H10D; H10D99/00; H10W20/00; H10W20/40; H10W72/50; H10W72/531; H10W72/5363; H10W72/551; H10W72/552; H10W72/5524; H10W72/59; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
138 words
A semiconductor device comprising: a crystalline semiconductor body with a major surface having a central portion thereon; a first conductivity type collector region having a hub including the central portion of the surface; an annular base region of a second conductivity type disposed adjacent said collector region and around the hub, said base region comprising: a high resistivity region comprising an inner peripheral ring surrounding said hub and a plurality of oblong lobes radially extending from said inner ring; a high conductivity region comprising an outer peripheral ring and a plurality of wedge-shaped regions tapering inward toward the hub and between adjacent oblong lobes; a plurality of first conductivity type emitter regions, each centrally disposed in one of the oblong lobes; and means for making ohmic contact to said collector region, said emitter regions, and said base region.
Claim 2
Dependent Claim
138 words
A semiconductor device comprising: a crystalline semiconductor body with a major surface having a central portion thereon; a first conductivity type collector region having a hub including the central portion of the surface; an annular base region of a second conductivity type disposed adjacent said collector region and around the hub, said base region comprising: a high resistivity region comprising an inner peripheral ring surrounding said hub and a plurality of oblong lobes radially extending from said inner ring; a high conductivity region comprising an outer peripheral ring and a plurality of wedge-shaped regions tapering inward toward the hub and between adjacent oblong lobes; a plurality of first conductivity type emitter regions, each centrally disposed in one of the oblong lobes; and means for making ohmic contact to said collector region, said emitter regions, and said base region.
Claim 3
Dependent Claim
24 words
A semiconductor device according to claim 1, in which the high resistivity base lobes are disposed between 0.02 to 0.08 mil below said surface.
Claim 4
Dependent Claim
23 words
A semiconductor device according to claim 1, in which the high conductivity base region is disposed between 0.05 to 0.15 below the surface.
Claim 5
Dependent Claim
66 words
A semiconductor device according to claim 1, in which the means for making ohmic contact to said emitter region comprises: an insulating layer disposed over the surface; the layer having a plurality of apertures, each aperture exposing a portion of the surface at an emitter region; and a metallic film disposed over the layer, said film making ohmic contact to said emitter regions through the apertures.
Claim 6
Dependent Claim
52 words
A semiconductor device according to claim 1, in which the means for making ohmic contact to said base region comprises: a metal ring disposed on the outer peripheral ring of said high conductivity base region; and a pair of opposing bond pads disposed contiguous with the outer periphery of the metal ring.
Claim 7
Dependent Claim
157 words
A transistor comprising: a crystalline semiconductor body having a major surface with an insulating layer disposed over a portion of the surface; a first conductivity type collector region having a plurality of hubs extending to the surface and spaced a predetermined distance apart; a plurality of annular base regions of a second conductivity type disposed adjacent said collector region, each said annular base region disposed around one of the hubs, and comprising a high resistivity region comprising an inner peripheral ring surrounding each said hub and a plurality of oblong lobes radially extending from said inner ring; a high conductivity region comprising an outer peripheral ring and a plurality of wedge-shaped regions tapering inward toward the hub portion and between adjacent oblong lobes; a plurality of first conductivity type emitter regions, each centrally disposed in one of the oblong lobes; and means for making ohmic contact to said collector region, said emitter regions, and said base regions.
Claim 8
Dependent Claim
157 words
A transistor comprising: a crystalline semiconductor body having a major surface with an insulating layer disposed over a portion of the surface; a first conductivity type collector region having a plurality of hubs extending to the surface and spaced a predetermined distance apart; a plurality of annular base regions of a second conductivity type disposed adjacent said collector region, each said annular base region disposed around one of the hubs, and comprising a high resistivity region comprising an inner peripheral ring surrounding each said hub and a plurality of oblong lobes radially extending from said inner ring; a high conductivity region comprising an outer peripheral ring and a plurality of wedge-shaped regions tapering inward toward the hub portion and between adjacent oblong lobes; a plurality of first conductivity type emitter regions, each centrally disposed in one of the oblong lobes; and means for making ohmic contact to said collector region, said emitter regions, and said base regions.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-06-14 | 1974-12-14 | 1975-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-06-14 | 1978-12-14 | 1979-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-06-14 | 1982-12-14 | 1983-06-15 | $7700.00 | Window Closed / Lapsed |