US3585089A
Expired / Lapsed
US
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Method of making fast switching semiconductive devices with silicon nitride passivation
Assignee: Westinghouse Electric Corp
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Filing: 1969-06-24
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Granted: 1971-06-15
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Expires: 1989-06-24
Abstract
Abstract SILICON NITRIDE PASSIVATION, PREFERABLY WITH A SUB-LAYER OF SILICON DIOXIDE, IS DISCLOSED FOR FAST SWITCHING (GOLD DOPED) SEMICONDUCTOR DEVICES IN A PROCESS WHEREIN NITRIDE DEPOSITION AND PATTERN FORMATION IS COMPLETED PRIOR TO GOLD DOPING SO THE NITRIDE LAYER IS OF GOOD QUALITY AND READILY ETCHED.
Inventors
- 👤 John B Preece
- 👤 Winand J Dautzenberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 14:04
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W74/00; H10W74/40; Y; Y10; Y10S; Y10S148/00; Y10S148/114
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-06-14 | 1974-12-14 | 1975-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-06-14 | 1978-12-14 | 1979-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-06-14 | 1982-12-14 | 1983-06-15 | $7700.00 | Window Closed / Lapsed |