Patent US3584268A successfully refreshed from Google Patents.
US3584268A
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Inverted space charge limited triode
Assignee: Xerox Corp
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Filing: 1967-03-03
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Granted: 1971-06-08
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Expires: 1987-03-03
Abstract
Abstract This disclosure is directed toward a method of fabricating an inverted space charge limited solid-state triode and to the device resulting therefrom. The method, in general, comprises depositing a continuous film of conductive metal to act as a gate, oxidizing the exposed side of the gate metal to form an insulating layer, depositing a semiconductive layer on the top of the insulated gate, depositing a pinhole cathode grid on the semiconductor, oxidizing the exposed side of the cathode grid to form an insulating coating, depositing more semiconductor over the cathode insulation and depositing a continuous film of conductive metal over the semiconductor to act as a collector.
Inventors
- 👤 Fred William Schmidlin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:06
CPC Classifications
H; H10; H10D; H10D99/00; H10D48/00; H10D48/30; H10D48/32; H10D48/36
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
26 words
The device of claim 1 wherein said second layer of insulating material surrounding said cathode grid is at least as thick as the effective gate-cathode separation.
Claim 2
Dependent Claim
28 words
The device of claim 1 wherein said cathode, anode, and gate metal is aluminum and wherein said first and second layers of insulating material comprise oxides of aluminum.
Claim 3
Dependent Claim
27 words
The device of claim 1 wherein said cathodE, anode, and gate metal is aluminum and wherein said first and second layers of semiconductive material are cadmium sulfide.
Claim 4
Dependent Claim
41 words
The device of claim 2 wherein said cathode, anode and gate metal is aluminum and wherein said first and second layers of insulating material comprise oxides of aluminum and wherein said first and second layers of semiconductive material are cadmium sulfide.
Claim 5
Dependent Claim
151 words
A space charge limited solid-state triode comprising an assembly of elements in the following order: a. a metal gate, b. a first layer of insulating materials on said gate, c. a first layer of semiconductive material on said first layer of insulating material, d. a cathode adapted to emit charge carriers on said first layer of semiconductive material, e. a second layer of insulating material surrounding said cathode on all sides except that side facing said gate, f. a second layer of semiconductive material covering said second layer of insulating material and in contact with said first layer of semiconductive material whereby said cathode and said second layer of insulating material are surrounded by semiconductive material, g. a metal anode on said second layer of semiconductive material, and h. means to enable the charge carriers emitted by said cathode to migrate through the said layers of semiconductive material to said anode.
References Cited (Backward Citations)
US2721965A
Cited
US2924760A
Cited
US3186879A
Cited
US3225272A
Cited
US3271640A
Cited
US3304471A
Cited
US3287610A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-06-07 | 1974-12-07 | 1975-06-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-06-07 | 1978-12-07 | 1979-06-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-06-07 | 1982-12-07 | 1983-06-08 | $7700.00 | Window Closed / Lapsed |