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US3582825A
Expired / Lapsed
US
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Variable frequency solid-state oscillator
Assignee: Hitachi Ltd
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Filing: 1968-07-19
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Granted: 1971-06-01
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Expires: 1988-07-19
Abstract
Abstract A variable frequency solid-state oscillator having on a surface of a trapezoid-shaped semiconductor substrate a laterally trapezoid-shaped epitaxial layer of N-type semiconductor monocrystal, the four sides of the trapezoid being planes of cleavage, a negative electrode being provided on the shorter side of the parallel opposite sides of the semiconductor layer on the substrate, and a positive electrode being provided on the longer side of the parallel opposite sides of the semiconductor layer on the substrate. Said oscillator oscillates with a frequency corresponding to the applied voltage when various values of voltage are applied to said device through said electrodes with means for applying excitation voltages.
Inventors
- 👤 Masatoshi Migitaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:19
CPC Classifications
H; H03; H03B; H03B9/00; H03B9/12
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
123 words
A variable frequency solid-state oscillator comprising: an N-type semiconductor monocrystal layer wherein current oscillation takes place when an intense electric field is applied thereto; a semiconductor monocrystal substrate which has a specific resistance higher than that of said semiconductor layer, said semiconductor layer being epitaxially grown on said substrate; said semiconductor layer and said substrate being triangular in shape, said semiconductor layer forming a top face of the resulting triangular body formed by said layers, three side faces of said triangular body being planes of cleavage; a negative electrode provided at one corner of said triangle of said semiconductor layer on said substrate; and a positive electrode being provided at the side opposite to said corner of said semiconductor layer on said substrate.
Claim 2
Dependent Claim
123 words
A variable frequency solid-state oscillator comprising: an N-type semiconductor monocrystal layer wherein current oscillation takes place when an intense electric field is applied thereto; a semiconductor monocrystal substrate which has a specific resistance higher than that of said semiconductor layer, said semiconductor layer being epitaxially grown on said substrate; said semiconductor layer and said substrate being triangular in shape, said semiconductor layer forming a top face of the resulting triangular body formed by said layers, three side faces of said triangular body being planes of cleavage; a negative electrode provided at one corner of said triangle of said semiconductor layer on said substrate; and a positive electrode being provided at the side opposite to said corner of said semiconductor layer on said substrate.
Claim 3
Dependent Claim
56 words
A variable frequency solid-state oscillator according to claim 1, wherein said substrate is GaAs, said semiconductor monocrystal layer is selected from high resistivity N-type GaAs and InP, said top face of said semiconductor layer has a crystalline surface of 111 , and said side faces of said triangular body have a crystalline surface of 110 .
Claim 4
Dependent Claim
129 words
A variable frequency solid-state oscillator comprising: an N-type semiconductor monocrystal layer wherein current oscillation takes place when an intense electric field is applied thereof; a semiconductor monocrystal substrate which has a specific resistance higher than that of said semiconductor layer, said semiconductor layer being epitaxially grown on said substrate; said semiconductor layer and said substrate being a trapezoid in shape, said semiconductor layer forming a top face of the resulting trapezoidal body formed by said layers, four side faces of said trapezoid being planes of cleavage; a negative electrode being provided on the shorter side of the parallel opposite sides of said semiconductor layer on said substrate; and a positive electrode being provided on the longer side of the parallel opposite sides of said semiconductor layer on the substrate.
Claim 5
Dependent Claim
129 words
A variable frequency solid-state oscillator comprising: an N-type semiconductor monocrystal layer wherein current oscillation takes place when an intense electric field is applied thereof; a semiconductor monocrystal substrate which has a specific resistance higher than that of said semiconductor layer, said semiconductor layer being epitaxially grown on said substrate; said semiconductor layer and said substrate being a trapezoid in shape, said semiconductor layer forming a top face of the resulting trapezoidal body formed by said layers, four side faces of said trapezoid being planes of cleavage; a negative electrode being provided on the shorter side of the parallel opposite sides of said semiconductor layer on said substrate; and a positive electrode being provided on the longer side of the parallel opposite sides of said semiconductor layer on the substrate.
Claim 6
Dependent Claim
55 words
A variable frequency solid-state oscillator according to claim 3, wherein said substrate is GaAs, said semiconductor monocrystal layer is selected from high resistivity N-type GaAs and InP, said top face of said semiconductor layer has a crystalline surface of 111 , and said side faces of said trapezoid have a crystalline surface of 110 .
References Cited (Backward Citations)
US3377566A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-05-31 | 1974-11-30 | 1975-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-05-31 | 1978-11-30 | 1979-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-05-31 | 1982-11-30 | 1983-06-01 | $7700.00 | Window Closed / Lapsed |