US3582729A
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Thick film capacitors and method of forming
Assignee: General Electric Co
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Filing: 1969-10-01
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Granted: 1971-06-01
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Expires: 1989-10-01
Abstract
Abstract High Q, low dielectric constant thick film capacitors capable of being fired at a temperature below 875* C. are formed from a dielectric mixture of a metal oxide having a melting temperature between 750* C. and 875* C. and at least 30 percent by weight of a niobate, preferably of cadmium, bound together by a glassy binder forming less than 15 percent by weight of the dielectric mixture. When at least two parts by weight barium titanate (or modified barium titanate) are mixed with one part by weight dielectric mixture prior to screen printing, a capacitor is formed having a dielectric constant of approximately 275 and a Q above 250.
Inventors
- 👤 Roland T Girard
- 👤 George A Rice
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 04:39
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/12; H01G4/129; H01G4/1209; H01G4/1254; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
88 words
A capacitor having two conductive electrodes and an intermediate dielectric containing less than 15 percent by weight of glass forming oxides to serve as a low temperature bonding agent for the dielectric, the remainder of said mixture consisting of a dielectric crystalline metal oxide forming between 15 percent and 45 percent by weight of the mixture and a niobate of a metal selected from the group consisting of niobium, potassium, tantalum, strontium and lead, and niobate forming between 30 percent and 60 percent by weight of the dielectric.
Claim 2
Dependent Claim
88 words
A capacitor having two conductive electrodes and an intermediate dielectric containing less than 15 percent by weight of glass forming oxides to serve as a low temperature bonding agent for the dielectric, the remainder of said mixture consisting of a dielectric crystalline metal oxide forming between 15 percent and 45 percent by weight of the mixture and a niobate of a metal selected from the group consisting of niobium, potassium, tantalum, strontium and lead, and niobate forming between 30 percent and 60 percent by weight of the dielectric.
Claim 3
Dependent Claim
30 words
A capacitor dielectric according to claim 1 further including an inert filler selected from the group consisting of aluminum oxide, magnesium oxide, zirconium oxide, a metal silicate and mixtures thereof.
Claim 4
Dependent Claim
53 words
A capacitor having two conductive electrodes and an intermediate dielectric comprising: PbO 3 percent-7 percent by wt. B2O3 1 percent-5 percent by wt. Bi2O3 10 percent-40 percent by wt. SiO2 3 percent-15 percent by wt. CdO 18 percent-30 percent by wt. Nb2O5 18 percent-30 percent by wt. NaF 0 percent-2 percent by wt.
Claim 5
Dependent Claim
53 words
A capacitor having two conductive electrodes and an intermediate dielectric comprising: PbO 3 percent-7 percent by wt. B2O3 1 percent-5 percent by wt. Bi2O3 10 percent-40 percent by wt. SiO2 3 percent-15 percent by wt. CdO 18 percent-30 percent by wt. Nb2O5 18 percent-30 percent by wt. NaF 0 percent-2 percent by wt.
Claim 6
Dependent Claim
31 words
A capacitor according to claim 3 wherein said dielectric includes an inert filler selected from the group consisting of aluminum oxide, magnesium oxide, zirconium oxide, a metal silicate and mixtures thereof.
Claim 7
Dependent Claim
33 words
A capacitor according to claim 3 wherein said dielectric is mixed with crystalline barium titanate in a ratio of at least two parts by weight barium titanate to one part by weight dielectric.
Claim 8
Dependent Claim
30 words
A capacitor according to claim 5 wherein said barium titanate is modified with a material selected from the group consisting of barium stannate, niobium oxide, neodynium oxide and mixtures thereof.
Claim 9
Dependent Claim
15 words
A capacitor according to claim 3 wherein said electrode is formed atop an alumina substrate.
Claim 10
Dependent Claim
94 words
A method of forming the capacitor of claim 3 comprising smelting the dielectric mixture of claim 3 at a temperature between 1150* C. and 1300* C. to form a melt, rapidly quenching said melt to retain a glassy component in the cooled dielectric mixture, grinding said cooled dielectric mixture to a dimension suitable for screen printing, screen printing said ground dielectric mixture atop one said conductive substrate, depositing said second conductive substrate atop said dielectric mixture to form a laminar structure and firing said laminar structure at a temperature between 750* and 900* C.
Claim 11
Dependent Claim
64 words
A method of forming a capacitor according to claim 8 further including mixing a compound selected from the group consisting of barium titanate and modifications of barium titanate with a material selected from the group consisting of lanthanum oxide, niobium oxide, neodynium oxide, strontium stannate and mixtures thereof into said ground dielectric mixture prior to screen printing said dielectric mixture atop said conductive substrate.
References Cited (Backward Citations)
US3293077A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-05-31 | 1974-11-30 | 1975-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-05-31 | 1978-11-30 | 1979-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-05-31 | 1982-11-30 | 1983-06-01 | $7700.00 | Window Closed / Lapsed |