US3579814A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating a semiconductor device having an epitaxially grown region
Assignee: International Business Machines Corp
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Filing: 1968-03-18
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Granted: 1971-05-25
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Expires: 1988-03-18
Abstract
Abstract Disclosed is a method of making minute semiconductor devices wherein superposed apertured insulating, metal contact and insulating layers are applied to the semiconductor base layer and semiconductor material is provided within the aperture but spaced from the metal contact layer by the second insulating layer.
Inventors
- 👤 Frederick H Dill Jr
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 05:26
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10D; H10D10/00; H10D10/01; H10D10/051; H10D99/00; H10P; H10P95/00; H10W20/00; H10W20/40; H10W20/482; H10W20/484; H10W72/00; H10W72/90
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
154 words
A process of fabricating a semiconductor device comprising the steps of: forming an insulating layer on a surface of a semiconductor wafer; opening a hole through said insulating layer to expose a limited surface area of said wafer, diffusing an impurity into the wafer through said hole to convert a surface portion of the wafer to opposite conductivity type, whereby at least a part of the base region of said device is produced, forming a metal layer over said insulating layer and into the hole therein, thereby to contact the surface of said wafer, forming at least one opening in said metal layer reaching to said base region, forming an insulating film on said metal layer, epitaxially growing a semiconductor emitter onto said base region through said at least one opening in said metal layer while maintaining the thickness of said base region constant, and forming a metal layer in contact with said emitter.
Claim 2
Dependent Claim
32 words
A method of fabricating semiconductor devices as defined in claim 2 wherein the semiconductor wafer is constituted of germanium of N conductivity type and the diffused impurity is P conductivity type determining.
Claim 3
Dependent Claim
33 words
A method as defined in claim 3 wherein the insulating layer is of silicon oxide, the metal layer is of aluminum and the insulating film on said metal layer is of aluminum oxide.
Claim 4
Dependent Claim
146 words
A process of fabricating a semiconductor device comprising the steps of: forming an insulating layer on a surface of a semiconductor wafer; opening a hole through said insulating layer to expose a limited surface area of said wafer, converting a surface portion of said wafer to opposite conductivity type, whereby at least a part of a base region of said device is produced, forming a metal layer over said insulating layer and into the hole therein thereby to contact the surface of said wafer, etching said metal layer to create a plurality of openings therein, each opening extending to said base region, forming an insulating film of said metal layer, growing a semiconductor emitter region onto said base region through said plurality of openings in said metal layer while maintaining the thickness of said base region constant, and forming a metal contact to said emitter region.
Claim 5
Dependent Claim
184 words
A process of fabricating a semiconductor device comprising the steps of: forming an insulating layer on a surface of a semiconductor wafer, opening a hole through said insulating layer to expose the limited surface area of said wafer, converting a surface portion of said wafer to opposite conductivity type, whereby at least a parT of a base region of said device is produced, forming a metal layer over said insulating layer and into the hole therein thereby to contact the surface of said wafer, depositing a second insulating layer onto said metal layer, etching said metal layer and said second insulating layer to create at least one opening therein which extends to said base region, and to expose said metal layer in only those portions of said metal layer which bound said at least one opening, forming an insulating film of said metal layer on said exposed portions of said metal layer, forming a semiconductor emitter region on said base region within said at least one opening while maintaining the thickness of said base region constant, and forming a contact to said emitter region.
Claim 6
Dependent Claim
181 words
A process of fabricating a semiconductor device comprising the steps of: forming an insulating layer on a surface of a semiconductor wafer, opening a hole through said insulating layer to expose a limited surface area of said wafer, converting a surface portion of said wafer to opposite conductivity type, whereby a first part of the base region of said device is produced, forming a metal layer over said insulating layer and into the hole therein, thereby to contact the surface of said wafer, forming at least one opening in said metal layer reaching to said base region, epitaxially depositing semiconductor material onto said base region through said at least one opening in said metal layer while maintaining the thickness of said first part of said base region constant, said deposition sealing the edges of said metal layer which bound said at least one opening, epitaxially depositing a semiconductor emitter region onto said deposited semiconductor material while maintaining the thickness of said first part of said base region and said deposited semiconductor material constant and forming a contact to said emitter region.
Claim 7
Dependent Claim
24 words
The process of claim 7, wherein said semiconductor wafer is comprised of germanium of N-type conductivity and said base region is of P-type conductivity.
Claim 8
Dependent Claim
18 words
The process of claim 8, wherein said insulating layer is silicon oxide and said metal layer is aluminum.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-05-24 | 1974-11-23 | 1975-05-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-05-24 | 1978-11-23 | 1979-05-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-05-24 | 1982-11-23 | 1983-05-25 | $7700.00 | Window Closed / Lapsed |