Patent US3579375A successfully refreshed from Google Patents.
US3579375A
Expired / Lapsed
US
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Method of making ohmic contact to semiconductor devices
Assignee: RCA Corp
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Filing: 1968-10-18
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Granted: 1971-05-18
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Expires: 1988-10-18
Abstract
Abstract A METHOD OF MAKING OHMIC CONTACTS TO A SEMICONDUCTOR DEVICE WHEREIN ALUMINUM IS DEPOSITED ON AT LEAST ONE OF SEVERAL CONTACT AREAS ON THE SEMICONDUCTOR BODY, NICKEL IS DEPOSITED ELECTROLESSLY SIMULTANEOUSLY ON THE ALUMINUM LAYER AND ON A CONTACT AREA NOT COVERED WITH ALUMINUM, THE NICKEL LAYER BEING BUILT UP IN A SERIES OF SEPARATE DEPOSITIONS, THE NICKEL IS SINTERED AFTER EACH DEPOSITION AND SOLDER IS FINALLY DEPOSITED ON ALL THE NICKEL SURFACES.
Inventors
- 👤 Edmund Wonilowicz
- 👤 Henry F Machnacz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 13:16
CPC Classifications
H; H10; H10P; H10P95/00; H10P14/00; H10P14/40; H10P14/46; H10W; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-05-17 | 1974-11-16 | 1975-05-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-05-17 | 1978-11-16 | 1979-05-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-05-17 | 1982-11-16 | 1983-05-18 | $7700.00 | Window Closed / Lapsed |