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US3579059A Expired / Lapsed US ⏱️ 0.0 years remaining

Multiple collector lateral transistor device

Assignee: National Semiconductor Corp
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Filing: 1968-03-11
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Granted: 1971-05-18
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Expires: 1988-03-11
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Abstract

Abstract A lateral transistor device constructed to have a single emitter region and a single base region operatively associated with a plurality of collector regions. Each of the various collector regions forms a separate PN junction with the base region which is dimensioned and disposed with respect to the base-emitter junction to provide a predetermined portion of the total available collector current.

Inventors

  • 👤 Robert J Widlar

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 13:15
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/124; H10D62/126; H10D10/00; H10D10/60

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 38 words
A lateral transistor device as recited in claim 1 wherein said collector regions are disposed about said single emitter region at predetermined distances from the nearest emitter-base junction, and said collector regions are spacially separated from each other.
Claim 2
Dependent Claim 24 words
A lateral transistor device as recited in claim 2 wherein said collector regions lie in a segmented beltlike region which circumscribes said emitter region.
Claim 3
Dependent Claim 106 words
In a lateral transistor structure of the type having a base region of a first conductivity type and discrete emitter and collector regions of a second conductivity type formed in said base region and spacially separated from each other, the improvement comprising: collector means including a plurality of individual and discrete collector regions of said second conductivity type disposed in spaced apart relationship about a single emitter region of said second conductivity type, said collector regions having different effective junction length opposing said emitter region so as to provide collector currents which are directly proportional to the relative effective junction lengths of the respective collector regions.
Claim 4
Dependent Claim 150 words
A lateraL transistor device for use in dividing an electrical current into a plurality of proportional electrical currents comprising: a body of semiconductive material of a first conductivity type forming a base region to which a first electrical terminal is connected; a single discrete emitter region of a second conductivity type formed in said base region and having a second electrical terminal connected thereto through which said electrical current may be caused to pass; and a plurality of discrete collector regions of said second conductivity type formed in said base region along a path spaced from but circumscribing said emitter region, said collector region having different effective lengths opposing said emitter region, a plurality of electrical output terminals respectively connected to said collector regions such that the output currents obtainable at the respective output terminals are proportionally related to the portion of the circumscribing path which each collector region occupies.

References Cited (Backward Citations)

US2666150A Cited
US2827599A Cited
US2882463A Cited
US3197710A Cited
US3389230A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1974-05-17 1974-11-16 1975-05-18 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1978-05-17 1978-11-16 1979-05-18 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1982-05-17 1982-11-16 1983-05-18 $7700.00 Window Closed / Lapsed

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