Abstract An integral semiconductor diode laser designed for increased heat-dissipation efficiency. A diode element is sandwiched between, and is integral with, layers of semiinsulating semiconductor material. Opposed cleaved surfaces are provided on the device cutting across the diode PN junction and defining a laser cavity through which the PN junction extends. In preparation, a layer of high conductivity semiconductor material is disposed integral with a layer of semiinsulating semiconductor material and the semiinsulating material is grooved to expose portions of the surface of the high conductivity material. Semiconductor material of one conductivity type is then deposited on the exposed high conductivity material, followed by the provision of semiconductor material of opposite conductivity type to form PN junctions within the grooves. The top surface is then lapped to provide coplanarity between the semiinsulating and diode element materials. Electrical contacts are then disposed on the top, coplanar surface and bottom, high conductivity surface.
The method of claim 1 wherein said semiconductor material of first conductivity type is deposited to a thickness less than said predetermined distance and said semiconductor material of second conductivity type is epitaxially deposited on said semiconductor material of second conductivity type.
Claim 2
Dependent Claim
31 words
The method of claim 1 including the step of lapping the top surfaces of said semiinsulating material and said semiconductor material of second type conductivity to form a coplanar surface thereof.
Claim 3
Dependent Claim
46 words
The method of claim 1 wherein said semiconductor material of second conductivity is deposited so as to extend beyond the top surface of said semiinsulating material and said semiconductor material of second type conductivity and said semiinsulating material are lapped to form a coplanar surface thereof.
Claim 4
Dependent Claim
30 words
The method of claim 1 including the step of forming electrical contact means on said body of high conductivity semiconductor material and on said semiconductor material of second type conductivity.
Claim 5
Dependent Claim
42 words
The method of claim 3 including the step of forming an electrical contact on said body of high conductivity semiconductor material and an electrical contact on said single surface abutting both said semiconductor material of second type conductivity and said semiinsulating material.
Claim 6
Dependent Claim
38 words
The method of claim 1 wherein said strips are formed by disposing said body as an integral layer on a member of semiinsulating semiconductor material and then grooving said member to form said strips of semiinsulating semiconductor material.
Claim 7
Dependent Claim
40 words
The method of claim 1 wherein said strips are at least a plurality of times longer than the length of said laser cavity and said structure is laterally cleaved along its length to provide a plurality of said diode lasers.
Claim 8
Dependent Claim
61 words
The method of claim 1 wherein a plurality greater than two of strips of said semiinsulating material are formed on said body surface thereby demarcating a plurality of portions of said surface so that a plurality of said PN junctions are formed, and said structure is subdivided to obtain a plurality of diode structures, each structure having a single PN junction.
Claim 9
Dependent Claim
44 words
The method of claim 9 wherein each subdivided diode structure is at least a plurality of times longer than the length of said laser cavity and each of said structures is laterally cleaved along its lengtH to provide a plurality of said diode lasers.