Semiconductor laser device and method for it{3 s fabrication

Abstract

Abstract An integral semiconductor diode laser designed for increased heat-dissipation efficiency. A diode element is sandwiched between, and is integral with, layers of semiinsulating semiconductor material. Opposed cleaved surfaces are provided on the device cutting across the diode PN junction and defining a laser cavity through which the PN junction extends. In preparation, a layer of high conductivity semiconductor material is disposed integral with a layer of semiinsulating semiconductor material and the semiinsulating material is grooved to expose portions of the surface of the high conductivity material. Semiconductor material of one conductivity type is then deposited on the exposed high conductivity material, followed by the provision of semiconductor material of opposite conductivity type to form PN junctions within the grooves. The top surface is then lapped to provide coplanarity between the semiinsulating and diode element materials. Electrical contacts are then disposed on the top, coplanar surface and bottom, high conductivity surface.

Inventors

• 👤 Bernd Ross

Bibliographic Details