Patent US3576685A successfully refreshed from Google Patents.
US3576685A
Expired / Lapsed
US
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Doping semiconductors with elemental dopant impurity
Assignee: TDK Micronas GmbH
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Filing: 1968-03-15
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Granted: 1971-04-27
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Expires: 1988-03-15
Abstract
Abstract THIS INVENTION PROVIDES A METHOD OF DOPING SEMICONDUCTOR MATERIAL BY DECOMPOSING A COMPOUND OF THE DOPANT MATERIAL AND DEPOSITING THE ELEMENTAL DOPANT MATERIAL UPON THE SEMICONDUCTOR SURFACE.
Inventors
- 👤 Richard C G Swann
- 👤 Thomas P Cauge
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 14:21
CPC Classifications
H; H10; H10P; H10P95/00; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/345; C23F; C23F1/00; C23F1/02; H10W; H10W74/00; H10W74/40; H10W74/43
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-04-26 | 1974-10-26 | 1975-04-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-04-26 | 1978-10-26 | 1979-04-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-04-26 | 1982-10-26 | 1983-04-27 | $7700.00 | Window Closed / Lapsed |