Patent US3576478A successfully refreshed from Google Patents.
US3576478A
Expired / Lapsed
US
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Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode
Assignee: Lanteris Space LLC
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Filing: 1969-07-22
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Granted: 1971-04-27
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Expires: 1989-07-22
Abstract
Abstract Insulated Gate Field Effect Transistor employing a polycrystalline semiconductor surface layer, one strip of which serves as the gate electrode of the IGFET, and another strip of which may serve as a resistor. The semiconductor surface layer is employed as a mask for the diffusion of the source and drain regions, thereby insuring automatic alignment between the gate electrode and the source and drain regions.
Inventors
- 👤 Boyd G Watkins
- 👤 Michael J Selser
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 13:59
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10D; H10D99/00; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S148/043; Y10S148/053; Y10S148/106; Y10S148/122; Y10S148/136
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
118 words
The structure of claim 1 further including a resistor formed over said surface at a location spaced from said gate electrode and said source and drain regions, said resistor comprising (a) a polycrystalline layer of silicon, (b) a pair of contacts positioned at spaced locations on said layer, said silicon layer of said resistor being configured so as to provide a predetermined resistance between said pair of contacts, and (c) a layer of a silicon oxide, surrounding and contiguous said silicon layer of said resistor and having a thickness sufficient to insulate said silicon layer of said resistor from said wafer and to enable said silicon layer of said resistor to serve as a crossunder in said structure.
Claim 2
Dependent Claim
33 words
A structure according to claim 2, wherein said silicon oxide of said film and said silicon oxide of said layer surrounding and contiguous said silicon layer of said resistor are both silicon dioxide.
Claim 3
Dependent Claim
38 words
The structure of claim 2 further including a layer of a silicon oxide positioned over said gate electrode, said polycrystalline layer of silicon of said resistor being an elongated strip with widened areas at said spaced locations thereon.
Claim 4
Dependent Claim
18 words
The structure of claim 1 further including a layer of a silicon oxide positioned over said gate electrode.
Claim 5
Dependent Claim
71 words
The structure of claim 1 wherein said source and drain regions are shaped and located so that the portion of said surface of said wafer between said source and drain regions is elongated and has parallel opposing major edges, said gate electrode also being elongated and having parallel opposing major edges, the major edges of said gate electrode being parallel to the major edges of said elongated portion of said wafer.
Claim 6
Dependent Claim
13 words
A transistor according to claim 1, wherein said silicon oxide is silicon dioxide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-04-26 | 1974-10-26 | 1975-04-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-04-26 | 1978-10-26 | 1979-04-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-04-26 | 1982-10-26 | 1983-04-27 | $7700.00 | Window Closed / Lapsed |