Abstract P-channel field-effect transistors are described which include a silicon substrate with an N-type epitaxial layer on one face thereof and an N-type subepitaxial diffused region which extends in one direction into a P-type region in the face of the substrate and in the opposite direction into the epitaxial layer to form a junction with a P-type diffused channel region extending partially into the epitaxial layer. These P-channel transistors may constitute a portion of an integrated circuit including a complementary N-channel field effect transistor and/or vertical and surface bipolar NPN and PNP transistors and resistors. Processes are disclosed for forming such transistors wherein a P-type diffusion in an epitaxial layer and an N-type diffused subepitaxial region are further diffused to form a junction therebetween.
diffused source and drain regions of said opposite conductivity type formed within said channel region spaced from each other; and
Claim 2
Dependent Claim
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a diffused emitter region of said opposite conductivity type formed within said one of said second type pockets within but spaced from said ring-shaped collector region; and
Claim 3
Dependent Claim
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a diffused emitter region of said one conductivity type formed within said collector region; and
Claim 4
Dependent Claim
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The monolithic integrated circuit of claim 1 wherein said one and opposite conductivity types are respectively N-type and P-type, and wherein said first and second field-effect transistors are respectively N-channel and P-channel.
Claim 5
Dependent Claim
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a diffused gate region of said one conductivity type formed within said channel region spaced from said source and drain regions.
Claim 6
Dependent Claim
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The monolithic integrated circuit of claim 1 and further including: a. an NPN transistor formed within one of said second type pockets and including:
Claim 7
Dependent Claim
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a diffused base contact region of said one conductivity type formed within said one of said second type pockets spaced from said ring-shaped collector region and from its respective isolation ring, buried region and subepitaxial region; wherein b. the remaining area of said one of said second type pockets being the base region of said PNP transistor.
Claim 8
Dependent Claim
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a diffused base contact region of said one conductivity type formed within said one of said second type pockets spaced from said collector region and from its respective isolation ring, buried region and subepitaxial region; wherein b. the remaining area of said one of said second type pockets being the base region of said NPN transistor.
Claim 9
Dependent Claim
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The monolithic integrated circuit of claim 1 and further including: a. a PNP transistor formed within one of said second type pockets and including:
Claim 10
Dependent Claim
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The monolithic integrated circuit of claim 1 and further including a diffused resistor of said opposite type conductivity formed within said epitaxial layer remote from said first and second type pockets.