Field effect transistors for integrated circuits and methods of manufacture

Abstract

Abstract P-channel field-effect transistors are described which include a silicon substrate with an N-type epitaxial layer on one face thereof and an N-type subepitaxial diffused region which extends in one direction into a P-type region in the face of the substrate and in the opposite direction into the epitaxial layer to form a junction with a P-type diffused channel region extending partially into the epitaxial layer. These P-channel transistors may constitute a portion of an integrated circuit including a complementary N-channel field effect transistor and/or vertical and surface bipolar NPN and PNP transistors and resistors. Processes are disclosed for forming such transistors wherein a P-type diffusion in an epitaxial layer and an N-type diffused subepitaxial region are further diffused to form a junction therebetween.

Inventors

• 👤 John William Kronlage

Bibliographic Details