Patent US3575742A successfully refreshed from Google Patents.
US3575742A
Expired / Lapsed
US
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Method of making a semiconductor device
Assignee: Solitron Devices Inc
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Filing: 1969-07-22
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Granted: 1971-04-20
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Expires: 1989-07-22
Abstract
Abstract A SEMICONDUCTOR DEVICE IS PRODUCED BY DEPOSITING A P-TYPE DOPED OXIDE ONTO THE MASKED SURFACE OF AN N-TYPE SEMICONDUCTOR SUBSTRATE, PREDIFFUSING THE P-TYPE IMPURITY INTO THE SURFACE OF THE SUBSTRATE, REMOVING THE CENTER PORTION OF THE OXIDE AND FURTHER DIFFUSING THE P-TYPE DOPANT FROM THE OXIDE INTO THE SUBSTRATE. TO FORM A TRANSISTOR, AN EMITTER REGION IS DIFFUSED INTO THE SUBSTRATE THROUGH THE AFOREMENTIONED CENTER PORTION.
Inventors
- 👤 George J Gilbert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:49
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D99/00; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-04-19 | 1974-10-19 | 1975-04-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-04-19 | 1978-10-19 | 1979-04-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-04-19 | 1982-10-19 | 1983-04-20 | $7700.00 | Window Closed / Lapsed |