Method of fabricating small-area semiconductor devices
Abstract
Abstract THIS INVENTION RELATES TO A METHOD OF MANUFACTURING EXTREMELY SMALL AREA SEMICONDUCTOR DEVICES BY FIRST PRODUCING VERY SMALL APERTURES BY MEANS OF ENERGETIC PARTICLES IN NON-CONDUCTIVE PASSIVATING LAYERS PLACED ON SEMICONDUCTORS, AND THE SUBSEQUENT USE OF THESE APERTURES TO FABRICATE SEMICONDUCTOR DEVICES OF EXCEPTIONALLY GOOD HIGH-FREQUENCY PERFORMANCE. THE TECHNIQUE IS BASED UPON THE DAMAGE TRACKS PRODUCED IN INSULATING SOLIDS USED TO PASSIVATE SEMICONDUCTORS BY EXPOSING THEM TO ENERGETIC PARTICLES SUCH AS, FOR EXAMPLE, ALPHA PARTICLES ABOVE A THRESHOLD VALUE, AND SUBSEQUENTLY ETCHING AWAY THE DAMAGED REGION TO LEAVE VERY SMALL APERTURES IN THE INSULATING SOLID. SEMICONDUCTOR PLATING AN FABRICATING TECHNIQUES ARE SUBSEQUENTLY USED TO PRODUCE A VARIETY OF SEMICONDUCTORS AND IN PARTICULAR SEMICONDUCTORS OF THE SCHOTTKY DIODE TYPE.
Inventors
- 👤 Arthur Uhlir Jr
Bibliographic Details
Claims Analysis
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