Patent US3574679A successfully refreshed from Google Patents.
US3574679A
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US
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Process for embedding or encircling polycrystalline materials in single crystal material
Assignee: Boeing North American Inc
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Filing: 1965-01-25
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Granted: 1971-04-13
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Expires: 1985-01-25
Abstract
Abstract CRYSTALLINE GROWTH AT NUCLEATION SITES ON THE POLYCRYSTALLINE BODY DOES NOT OCCUR. IN AN EXEMPLARY EMBODIMENT, EPITAXIALLY GROWTH MONOCRYSTALLINE FERRITE EMBEDS POLYCRYSTALLINE METALLIC CONDUCTORS TO FORM A STRUCTURE USEFUL AS A MAGNETIC MEMORY. A PROCESS FOR ENCIRCLING A POLYCRYSTALLINE BODY IN SINGLE CRYSTAL MATERIAL. A SINGLE CRYSTAL SEED IS PLACED IN A REACTOR ADJACENT THE POLYCRYSTALLINE BODY. CHEMICAL VAPOR DEPOSITION IS USED TO DEPOSIT EPITAXIALLY A SINGLE CRYSTAL MATERIAL ON THE SEED, GROWTH BEING CONTINUED UNTIL THE DEPOSIT BUILDS ONTO AND AT LEAST PARTIALLY SURROUNDS THE BODY. THE RATE OF DEPOSITION IS CONTROLLED SO THAT POLY-
Inventors
- 👤 George R Pulliam
- 👤 John L Archer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 13:59
CPC Classifications
H; H01; H01F; H01F1/00; H01F1/01; H01F1/03; H01F1/0302; H01F1/0311; H01F1/0313; H01F1/0315; H01F10/00; H01F10/06; H01F41/00; H01F41/14; H01F41/22
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-04-12 | 1974-10-12 | 1975-04-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-04-12 | 1978-10-12 | 1979-04-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-04-12 | 1982-10-12 | 1983-04-13 | $7700.00 | Window Closed / Lapsed |