Method of producing semiconductor layers by precipitation from the gaseous phase
Abstract
Abstract THE INVENTION RELATES TO A METHOD FOR PRODUCING SEMICONDUCTOR LAYERS OF THE SAME OR VARIABLE CONDUCTANCE TYPE AND/OR VARIABLE CONDUCTIVITY BY PRECIPITATING FROM A GASEOUS PHASE UPON A MONOCRYSTALLINE CARRIER BODY OF THE SAME OR SIMILAR LATTIE STRUCTURE. THE INVENTION PREVENTS, DURING THE PRECIPITATION OF THE SEMICONDUCTING LAYERS UPON THE CARRIER BODY, THE EDGES OF THE CARRIER DISCS, WHICH ARE PARTICULARLY AFFECTED BY THE ACTION OF THE REACTION GAS, FROM BEING BROUGH NTO THE GROWTH LAYER WHICH IS COMPRISED OF ANOTHER MATERIAL. THIS IS ACHIEVED BY THE CARRIER BODY FOR EPITACTIC PRECIPITATION BEING PROVIDED ON ALL SIDES, BUT A LEAST AT THE EDGES, WITH A PROTECTIVE COVERING WHICH LAYERS FREE ONLY THAT PART OF THE SURFACE UPON WHICH THE SEMICONDUCTOR LAYER IS TO BE PRECIPITATED.
Inventors
- 👤 Hansjurgen Dersin
- 👤 Erwin Fruchte
Bibliographic Details
Claims Analysis
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