Patent US3558995A successfully refreshed from Google Patents.
US3569799A
Expired / Lapsed
US
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Negative resistance device with controllable switching
Assignee: International Business Machines Corp
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Filing: 1967-01-13
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Granted: 1971-03-09
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Expires: 1987-01-13
Abstract
Abstract This disclosure provides a control feature for a solid state device which has a negative resistance characteristic in the current-voltage curve due to an insulator in the current path. A negative resistance device is fabricated by planar technology to have an insulator layer interposed between a semiconductor layer and a metal layer in the negative resistance current path. The control feature is provided through a control electrode which has a lateral junction in the semiconductor layer and near to the current path through the insulator layer. Control voltage pulses of opposite polarities applied to the control electrode obtain switching between stable states of the device in both directions without a requirement of turning off the current.
Inventors
- 👤 Frank F Fang
- 👤 Alan B Fowler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:05
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/30; H10D48/32; H10D48/366; H10D62/00; H10D62/10; H10D62/13; H10D62/133; H10D84/00; H10D84/201; H10D84/204; H10D99/00; H10W; H10W74/00; H10W74/40; H10W74/43
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
165 words
A three terminal solid state device having a negative resistance in the current-voltage characteristics of a current conductive path thereof between two of said terminals which comprises: a planar structure in said current conductive path having a metal layer, a semiconductor layer and an insulator layer therebetween which exhibits a negative resistance characteristic in said current conductive path, said metal layer and said semiconductor layer being connected to one each of said two terminals, respectively; and control electrode layer means connected to said other terminal and located adjacent to said semiconductor layer for providing a minority carrier injecting and extracting control electrode junction with said semiconductor layer, said control electrode junction being near to the surfaCe of said semiconductor layer defined by said semiconductor layer and said insulator layer and substantially perpendicular to said semiconductor surface and proximate to and outside of said current conductive path for interchanging two stable operating conditions of said device by minority carrier injection and extraction in said semiconductor layer.
Claim 2
Dependent Claim
165 words
A three terminal solid state device having a negative resistance in the current-voltage characteristics of a current conductive path thereof between two of said terminals which comprises: a planar structure in said current conductive path having a metal layer, a semiconductor layer and an insulator layer therebetween which exhibits a negative resistance characteristic in said current conductive path, said metal layer and said semiconductor layer being connected to one each of said two terminals, respectively; and control electrode layer means connected to said other terminal and located adjacent to said semiconductor layer for providing a minority carrier injecting and extracting control electrode junction with said semiconductor layer, said control electrode junction being near to the surfaCe of said semiconductor layer defined by said semiconductor layer and said insulator layer and substantially perpendicular to said semiconductor surface and proximate to and outside of said current conductive path for interchanging two stable operating conditions of said device by minority carrier injection and extraction in said semiconductor layer.
Claim 3
Dependent Claim
23 words
A device as set forth in claim 1 wherein said control electrode junction is in contact with said surface of said semiconductor layer.
Claim 4
Dependent Claim
37 words
A device as set forth in claim 1 wherein said junction is proximate to said current conductive path in said insulator layer by the order of the diffusion length for said minority carriers in said semiconductor layer.
Claim 5
Dependent Claim
23 words
A device as set forth in claim 1 wherein said control electrode is an N-type semiconductor and said semiconductor layer is P-type semiconductor.
Claim 6
Dependent Claim
24 words
A device as set forth in claim 4 wherein said metal is A1, said insulator layer is Si02 and said semiconductor is P-type Si.
Claim 7
Dependent Claim
26 words
A device as set forth in claim 5 wherein said Si02 insulator layer is doped with a dopant selected from the group of Ga and GaP.
Claim 8
Dependent Claim
22 words
A device as set forth in claim 1 wherein said control electrode is P-type semiconductor and said semiconductor layer is N-type semiconductor.
Claim 9
Dependent Claim
31 words
A device as set forth in claim 7 wherein said metal is A1, said insulator layer is Si02, said semiconductor layer is N-type Si, and said control electrode is P-type semiconductor.
Claim 10
Dependent Claim
27 words
A device is set forth in claim 8 wherein said Si02 insulator layer is doped with a dopant selected from the group consisting of Ga and GaP.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-03-08 | 1974-09-07 | 1975-03-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-03-08 | 1978-09-07 | 1979-03-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-03-08 | 1982-09-07 | 1983-03-09 | $7700.00 | Window Closed / Lapsed |