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US3568169A Expired / Lapsed US ⏱️ 0.0 years remaining

Duplex cycle for 2-d film memories

Assignee: International Business Machines Corp
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Filing: 1967-07-11
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Granted: 1971-03-02
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Expires: 1987-07-11
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Abstract

Abstract Magnetic memory having timing means to perform simultaneous operations on two words of the memory. In one embodiment the sequence is read A, clear B, write B, regenerate A. In a second embodiment the sequence is clear B, read A, write B, regenerate A.

Inventors

  • 👤 Victor T Shahan

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 21:40
CPC Classifications
G; G11; G11C; G11C7/00

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 252 words
In a memory having: a plurality of storage elements; word means coupled to said elements and individual to groups of elements forming a word and individually operable to excite the elements of an addressed word; bit means coupled to said elements and individual to elements of the same bit position in said words and operable to excite the elements of an addressed word in cooperation with said word means to store data and operable to detect signals produced when the elements of an addressed word are switched in a read operation; the improvement comprising: means for providing during a memory cycle a memory address of a first word to be addressed for a clear-write operation and a second word to be addressed for a read-regenerate operation; means to overlappingly operate said word means of said first addressed word for a clear operation and said second addressed word for a read operation, the beginning of the operation on said words being separated in time sufficiently for sensing changes in magnetization of the storage elements of the one of said words being read; means to read said one of said addressed words and operable to regenerate said one word in the memory after a delaY that is associated principally with said means to read and to regenerate; and means operable during said delay to energize said bit means in cooperation with said word means of the other of said addressed words to write predetermined data into the location of said other of said words.
Claim 2
Dependent Claim 252 words
In a memory having: a plurality of storage elements; word means coupled to said elements and individual to groups of elements forming a word and individually operable to excite the elements of an addressed word; bit means coupled to said elements and individual to elements of the same bit position in said words and operable to excite the elements of an addressed word in cooperation with said word means to store data and operable to detect signals produced when the elements of an addressed word are switched in a read operation; the improvement comprising: means for providing during a memory cycle a memory address of a first word to be addressed for a clear-write operation and a second word to be addressed for a read-regenerate operation; means to overlappingly operate said word means of said first addressed word for a clear operation and said second addressed word for a read operation, the beginning of the operation on said words being separated in time sufficiently for sensing changes in magnetization of the storage elements of the one of said words being read; means to read said one of said addressed words and operable to regenerate said one word in the memory after a delaY that is associated principally with said means to read and to regenerate; and means operable during said delay to energize said bit means in cooperation with said word means of the other of said addressed words to write predetermined data into the location of said other of said words.
Claim 3
Dependent Claim 26 words
A memory according to claim 1 in which the word means of said first word is operated ahead of the word means of said sensed word.
Claim 4
Dependent Claim 85 words
A memory according to claim 1 in which said bit means and said means responsive to the data stored in said one of said words comprises, for each bit position, a bit driver, a sense amplifier, wire means coupling said bit driver and said sense amplifier to the storage elements of the associated bit position, and register means for receiving data representing a signal from said sense amplifier and providing said signal to said bit driver for said bit driver to regenerate said one word.
Claim 5
Dependent Claim 24 words
A memory according to claim 1 in which said means operable during said delay to energize said bit means includes a Data In register.
Claim 6
Dependent Claim 27 words
A memory according to claim 4 in which said word means produces for either a clear-write operation or a read-regenerate operation a single pulse of one polarity.
Claim 7
Dependent Claim 235 words
In a memory having: a plurality of thin film storage elements; word means coupled to said elements and individual to groups of elements forming a word and operable to drive said elements into saturation in a hard axis direction for read-regenerate and clear-write operations; bit means coupled to said elements and individual to elements of the same bit position in said words and operable in cooperation with said word means to store data along the easy axis of said elements during regenerate and write operations and operable to detect signals produced when the elements of an addressed word are switched in a read operation; the improvement comprising: means to overlappingly operate said word means of a first and a second addressed word in a time succession spaced sufficiently for a read operation on one of said words independently of a clear operation on the other of said words; means responsive to data read from said one of said addressed words and operable after a delay associated principally with said means to detect signals to energize said bit means and to turn off said word means of said one of said addressed words to regenerate said one word in the memory; and means operable during said delay to energize said bit means and to turn off said word means of the other of said addressed words to write predetermined data into the other of said words.
Claim 8
Dependent Claim 235 words
In a memory having: a plurality of thin film storage elements; word means coupled to said elements and individual to groups of elements forming a word and operable to drive said elements into saturation in a hard axis direction for read-regenerate and clear-write operations; bit means coupled to said elements and individual to elements of the same bit position in said words and operable in cooperation with said word means to store data along the easy axis of said elements during regenerate and write operations and operable to detect signals produced when the elements of an addressed word are switched in a read operation; the improvement comprising: means to overlappingly operate said word means of a first and a second addressed word in a time succession spaced sufficiently for a read operation on one of said words independently of a clear operation on the other of said words; means responsive to data read from said one of said addressed words and operable after a delay associated principally with said means to detect signals to energize said bit means and to turn off said word means of said one of said addressed words to regenerate said one word in the memory; and means operable during said delay to energize said bit means and to turn off said word means of the other of said addressed words to write predetermined data into the other of said words.

References Cited (Backward Citations)

US3283313A Cited
US3414890A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1974-03-01 1974-08-31 1975-03-02 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1978-03-01 1978-08-31 1979-03-02 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1982-03-01 1982-08-31 1983-03-02 $7700.00 Window Closed / Lapsed

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