Buried metallic film devices and method of making the same
Abstract
Abstract ELECTRICAL CONDUCTORS AND FIELD PLATES UTILIZED IN INTEGRATED CIRCUIT COMPONENTS ARE BURIED IN INSULATING MEDIA BY FORMING AN INSULATED FILM ON THE SEMICONDUCTOR SUBSTRATE, DEPOSITING A METAL THEREOVER WHICH IS NONREACTIVE WITH THE INSULATOR AT TEMPERATURES OF THE ORDER OF 1100*C., AND COVERING THE CONDUCTIVE FILM WITH ANOTHER INSULATING FILM. AFTER ALL FABRICATION STEPS FOR THE INTEGRATED CIRCUIT DEVICE ARE COMPLETED, CONTACT TO THE METALLIC LAYER IS MADE BY ETCHING A HOLE THROUGH THE LAST DEPOSITED INSULATING FILM AT ONE POINT WITH AN ETCHANT WHICH IS NONREACTIVE WITH THE METALLIC FILM, AND METALIZING THE DEVICE IN THAT REGION, MAKING CONTACT WITH THE BURIED CONDUCTOR. SUCH BURIED CONDUCTORS MAY BE UTILIZED AS CONDUCTORS IN PRINTED CIRCUIT AND MONOLITHIC SEMICONDUCTOR DEVICES, AS CAPACITOR PLATES, AND AS GATE ELECTRODES IN FIELD-EFFECT TRANSISTORS.
Inventors
- 👤 William E Engeler
Bibliographic Details
Claims Analysis
Total Claims: 0References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-03-01 | 1974-08-31 | 1975-03-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-03-01 | 1978-08-31 | 1979-03-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-03-01 | 1982-08-31 | 1983-03-02 | $7700.00 | Window Closed / Lapsed |