Patent US3566210A successfully refreshed from Google Patents.
US3566210A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor switching device having a shorted emitter
Assignee: General Electric Co
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Filing: 1967-10-12
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Granted: 1971-02-23
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Expires: 1987-10-12
Abstract
Abstract The temperature and transient turn-on sensitivities of a highpower solid-state PNPN switching device can be reduced by using an inboard auxiliary region in one end layer (the emitter) of the device for triggering purposes and by spanning all external edges of the emitter junction with a low resistance shunt.
Inventors
- 👤 Angelo Louis Dececco
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:10
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D18/00; H10D62/00; H10D62/10; H10D62/124; H10D62/126; H10D62/13; H10D62/141; H10D62/148; H10D64/00; H10D64/20; H10D64/23; H10D64/233
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
182 words
An improved semiconductor switching device comprising first, second, third, and fourth layers of semiconductor material arranged in the named order between first and second main electrodes, with said first and third layers being of one conductivity type and said second and fourth layers being of the opposite conductivity type so that rectifying junctions are formed between contiguous layers, said first layer of semiconductor material comprising laterally adjoining main and auxiliary regions of said one conductivity type, said main region being disposed in relatively broad area contact with the first main electrode and said auxiliary region being free of said main electrodes, said device being adapted to be triggered from a relatively high impedance nonconducting state to a low impedance conducting state by gating means impinging on said auxiliary region of said first layer, wherein the improvement comprises: a. metallic means for conductively connecting said first layer to said second layer of semiconductor material, whereby the rectifying junction between said first and second layers is shunted by a path of relatively low impedance; b. said metallic means being spaced from said gating means.
Claim 2
Dependent Claim
182 words
An improved semiconductor switching device comprising first, second, third, and fourth layers of semiconductor material arranged in the named order between first and second main electrodes, with said first and third layers being of one conductivity type and said second and fourth layers being of the opposite conductivity type so that rectifying junctions are formed between contiguous layers, said first layer of semiconductor material comprising laterally adjoining main and auxiliary regions of said one conductivity type, said main region being disposed in relatively broad area contact with the first main electrode and said auxiliary region being free of said main electrodes, said device being adapted to be triggered from a relatively high impedance nonconducting state to a low impedance conducting state by gating means impinging on said auxiliary region of said first layer, wherein the improvement comprises: a. metallic means for conductively connecting said first layer to said second layer of semiconductor material, whereby the rectifying junction between said first and second layers is shunted by a path of relatively low impedance; b. said metallic means being spaced from said gating means.
Claim 3
Dependent Claim
39 words
The device of claim 7 in which said first layer has at least one aperture through which at least one nonperipheral part of said second layer is externally accessible, and said metallic means is in contact with said part.
Claim 4
Dependent Claim
38 words
The device of claim 7 in which the auxiliary region is located inboard with respect to the main region of said first layer, and said first main electrode has an aperture through which said auxiliary region is exposed.
Claim 5
Dependent Claim
35 words
The device of claim 3 in which said metallic means comprises an integral extension of said first main electrode, which exTension overlaps every external edge of the rectifying junction between said first and second layers.
Claim 6
Dependent Claim
187 words
An improved semiconductor switching device comprising a disclike body having first, second, third, and fourth layers of semiconductor material arranged in the named order between first and second main electrodes, with said first and third layers being of one conductivity type and said second and fourth layers being of the opposite conductivity type so that rectifying junctions are formed between contiguous layers, said first layers of said body comprising juxtaposed main and auxiliary regions of said one conductivity type, said main region being disposed in relatively broad area contact with the first main electrode and said auxiliary region being free of said main electrodes, said device being adapted to be triggered from a nonconducting state to a conducting state by gating means impinging on said auxiliary region of said first layer, wherein the improvement comprises: b. electroconductive means spanning every external edge of the rectifying junction between said first and second layers of said body, whereby the perimeter of said first layer is conductively connected to said second layer by a path of relatively low resistance; and b. said electroconductive means being spaced from said gating means.
Claim 7
Dependent Claim
187 words
An improved semiconductor switching device comprising a disclike body having first, second, third, and fourth layers of semiconductor material arranged in the named order between first and second main electrodes, with said first and third layers being of one conductivity type and said second and fourth layers being of the opposite conductivity type so that rectifying junctions are formed between contiguous layers, said first layers of said body comprising juxtaposed main and auxiliary regions of said one conductivity type, said main region being disposed in relatively broad area contact with the first main electrode and said auxiliary region being free of said main electrodes, said device being adapted to be triggered from a nonconducting state to a conducting state by gating means impinging on said auxiliary region of said first layer, wherein the improvement comprises: b. electroconductive means spanning every external edge of the rectifying junction between said first and second layers of said body, whereby the perimeter of said first layer is conductively connected to said second layer by a path of relatively low resistance; and b. said electroconductive means being spaced from said gating means.
Claim 8
Dependent Claim
14 words
The switching device of claim 5 in which said electroconductive means has negligible resistance.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-02-22 | 1974-08-24 | 1975-02-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-02-22 | 1978-08-24 | 1979-02-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-02-22 | 1982-08-24 | 1983-02-23 | $7700.00 | Window Closed / Lapsed |