Patent US3564355A successfully refreshed from Google Patents.
US3564355A
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Semiconductor device employing a p-n junction between induced p- and n- regions
Assignee: Sprague Electric Co
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Filing: 1968-08-02
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Granted: 1971-02-16
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Expires: 1988-08-02
Abstract
Abstract SEMICONDUCTOR DEVICES ARE FORMED BY THE INDUCTION OF P- AND N-REGIONS INTO A HIGH RESISTIVITY OR SEMI-INSULATINGSEMICONDUCTING FILM BY MEANS OF ELECTRIC FIELDS APPLIED PERPENDICULAR TO THE SEMICONDUCTOR FILM. BY CHANGING THE FIELD MAGNITUDE AND/OR POLARITY, THE LOCATION AND CONDUCTIVITY OF THE P- AND N-REGIONS CAN BE VARIED THEREBY VARYING THE CHARACTERISTICS OF THE DEVICE.
Inventors
- 👤 Kurt Lehovoc
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 14:27
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/062; B; B01; B01J; B01J7/00; B01J7/02; H10D; H10D44/00; H10D44/40; H10D44/45; H10D99/00; H10F; H10F99/00; H10H20/80
Claims Analysis
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-02-15 | 1974-08-17 | 1975-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-02-15 | 1978-08-17 | 1979-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-02-15 | 1982-08-17 | 1983-02-16 | $7700.00 | Window Closed / Lapsed |