Patent US3563816A successfully refreshed from Google Patents.
US3563816A
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Method for the vapor growth of semiconductors
Assignee: Hitachi Ltd
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Filing: 1966-03-31
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Granted: 1971-02-16
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Expires: 1986-03-31
Abstract
Abstract A LAYER OF SEMICONDUCTOR MATERIAL IS GROWN ON A SEED CRYSTAL BY UTILIZING A GASEOUS REACTION, WHEREIN A GASEOUS SOURCE MATERIAL AT AN INITIAL TEMPERATURE OF T1 IS HEATED TO A HIGHER TEMPERATURE, T2, UPSTREAM FROM THE SEED CRYSTAL, AND THEN TRANSPORTED DOWNSTREAM ONTO THE SEED CRYSTAL WHICH IS MAINTAINED AT A TEMPERATURE LOWER THAN T2.
Inventors
- 👤 Shinya Iida
- 👤 Yoshimitsu Sugita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 14:24
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/24; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3421; Y; Y10; Y10S; Y10S148/00; Y10S148/049; Y10S148/056
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-02-15 | 1974-08-17 | 1975-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-02-15 | 1978-08-17 | 1979-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-02-15 | 1982-08-17 | 1983-02-16 | $7700.00 | Window Closed / Lapsed |