Patent US3562040A successfully refreshed from Google Patents.
US3562040A
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US
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Method of uniformally and rapidly etching nichrome
Assignee: TDK Micronas GmbH
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Filing: 1967-05-03
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Granted: 1971-02-09
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Expires: 1987-05-03
Abstract
Abstract A PROCESS FOR FABRICATING A NICHROME THIN FILM RESISTOR AS AN INTEGRAL PART OF A SEMICONDUCTOR INTEGRATED CIRCUIT. THE NICHROME RESISTOR IS DEPOSITED ON A LAYER OF SILICON DIOXIDE GROWN OR DEPOSITED ON THE SEMICONDUCTOR SURFACE; ALUMINUM CONTACTS ARE DEPOSITED ON THE NICHROME RESISTANCE ELEMENT AND ALLOYED THERETO.
Inventors
- 👤 Gerald A Garies
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 13:13
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10D1/474; C; C23; C23F; C23F1/00; C23F1/10; C23F1/14; C23F1/16; C23F1/28
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-02-08 | 1974-08-10 | 1975-02-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-02-08 | 1978-08-10 | 1979-02-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-02-08 | 1982-08-10 | 1983-02-09 | $7700.00 | Window Closed / Lapsed |