Patent US3846791A successfully refreshed from Google Patents.
Patent US3558348A successfully refreshed from Google Patents.
US3558348A
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US
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Dielectric films for semiconductor devices
Assignee: AT&T Inc
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Filing: 1968-04-18
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Granted: 1971-01-26
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Expires: 1988-04-18
Abstract
Abstract MIXED SILICON OXIDE-SILICON NITRIDE FILMS OF PARTICULAR COMPOSITIONS ARE VAPOR DEPOSITED CONTROLLABLY ON SEMICONDUCTOR DEVICES BY A REACTION PROCESS IN NITROGEN AT BETWEEN 700-900*C. USING SILANE (SIH4) AND NITRIC OXIDE (NO) AS THE REACTANTS. THE COMPOSITION OF THE DEPOSITED FILM IS A FUNCTION OF THE RATIO OF REACTANT CONCENTRATIONS. PARTICULAR COMPOSITIONS YIELD FILMS WHICH COMBINE MINIMAL STRESS, RESISTANCE TO PENETRATION OF CONTAMINANTS, AND ETCHABILITY.
Inventors
- 👤 Myron J Rand
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 12:57
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/308; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; Y; Y10; Y10S; Y10S148/00; Y10S148/113; Y10S148/114
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-01-25 | 1974-07-27 | 1975-01-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-01-25 | 1978-07-27 | 1979-01-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-01-25 | 1982-07-27 | 1983-01-26 | $7700.00 | Window Closed / Lapsed |