Patent US3556951A successfully refreshed from Google Patents.
US3556951A
Expired / Lapsed
US
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Method of forming leads on semiconductor devices
Assignee: GTE Sylvania Inc
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Filing: 1967-08-04
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Granted: 1971-01-19
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Expires: 1987-08-04
Abstract
Abstract METHOD OF FORMING SUPPORTING BEAM LEADS ON A SEMICONDUCTOR WAFER BY DEPOSITING IN SUCCESSION THIN LAYERS OF TITANIUM, MOLYBDENUM, AND GOLD, MASKING WITH NONCONDUCTIVE PHOTO-RESIST, AND ELECTROPLATING GOLD TO FORM THICK MEMBERS. THE TITANIUM, MOLYBDENUM, AND GOLD NOT COVERED BY THE GOLD MEMBERS ARE REMOVED IN A SERIES OF COMPATIBLE STEPS LEAVING BEAM LEADS OF TITANIUM, MOLYBDENUM, AND GOLD.
Inventors
- 👤 Nino P Cerniglia
- 👤 Richard C Tonner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:33
CPC Classifications
H; H10; H10P; H10P95/00; C; C23; C23F; C23F1/00; C23F1/10; C23F1/14; C23F1/16; C23F1/26; H10W; H10W20/00; H10W20/40; H10W72/00; H10W72/60
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-01-18 | 1974-07-20 | 1975-01-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-01-18 | 1978-07-20 | 1979-01-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-01-18 | 1982-07-20 | 1983-01-19 | $7700.00 | Window Closed / Lapsed |