Patent US3556880A successfully refreshed from Google Patents.
US3556880A
Expired / Lapsed
US
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Method of treating semiconductor devices to improve lifetime
Assignee: RCA Corp
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Filing: 1968-04-11
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Granted: 1971-01-19
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Expires: 1988-04-11
Abstract
Abstract THE STABILITY AND LIFETIME OF A DEVICE COMPRISING A SEMICONDUCTOR BODY COVERED BY N INSULATING LAYER IS IMPROVED BY THERMALLY GROWING AT LEAST PART OF THE INSULATING LAYER IN AN ATMOSPHERE COMPRISING OXYGEN AND HYDROGEN CHLORIDE, AND SUBSTANTIALLY FREE OF WATER VAPOR. THE DEVICE IS HEATED IN THIS ATMOSPHERE TO ESTABLISH A GRADIENT FOR OUT-DIFFUSION OF CERTAIN DELETERIOUS METALS FROM THE DEVICE.
Inventors
- 👤 Frederic P Heiman
- 👤 Paul H Robinson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 22:31
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45; H01J29/451; H01J29/453; H01J29/455; H01J9/00; H01J9/20; H01J9/233; H10D; H10D99/00; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/049; Y10S148/053; Y10S148/118
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
US3007820A
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US2953486A
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US3085033A
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US3162557A
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US3183128A
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US3243323A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-01-18 | 1974-07-20 | 1975-01-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-01-18 | 1978-07-20 | 1979-01-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-01-18 | 1982-07-20 | 1983-01-19 | $7700.00 | Window Closed / Lapsed |