Patent US3555374A successfully refreshed from Google Patents.
US3555374A
Expired / Lapsed
US
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Field effect semiconductor device having a protective diode
Assignee: Hitachi Ltd
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Filing: 1968-03-04
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Granted: 1971-01-12
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Expires: 1988-03-04
Abstract
Abstract A SEMICONDUCTOR DEVICE COMPRISING A SEMICONDUCTOR ELEMENT HAVING AN INSULATED GATED ELECTRODE AND A PROTECTIVE DIODE REGION PROVIDED IN THE NEIGHBORHOOD OF THE SEMICONDUCTOR ELEMENT TO PROTECT THE GATE ELECTRODE FROM AKIELECTRIC BREAKDOWN; THE DIODE IS FORMED BY A LOW RESISTIVITY SEMICONDUCTOR MATERIAL TO REDUCE ITS INTERNAL RESISTANCE, THEREBY ACCELERATING THE ACTION OF THE PROTECTIVE DIODE SO THAT THE CLAMP ACTION OF THE DIODE OCCURS EARLIER THAN THE DIELECTRIC BREAKDOWN OF THE GATE ELECTRODE.
Inventors
- 👤 Koji Usuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 21:04
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/60; H10D89/601; H10D89/611; Y; Y10; Y10S; Y10S148/00; Y10S148/049; Y10S148/053; Y10S148/145
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-01-11 | 1974-07-13 | 1975-01-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-01-11 | 1978-07-13 | 1979-01-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-01-11 | 1982-07-13 | 1983-01-12 | $7700.00 | Window Closed / Lapsed |