Patent US5947995A successfully refreshed from Google Patents.
Patent US3544399A successfully refreshed from Google Patents.
US3544399A
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US
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Insulated gate field-effect transistor (igfet) with semiconductor gate electrode
Assignee: Raytheon Co
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Filing: 1966-10-26
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Granted: 1970-12-01
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Expires: 1986-10-26
Abstract
No abstract record available.
Inventors
- 👤 Hans G Dill
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 18:45
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10P; H10P76/00; H10P76/40; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/106
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1973-11-30 | 1974-06-01 | 1974-12-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1977-11-30 | 1978-06-01 | 1978-12-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1981-11-30 | 1982-06-01 | 1982-12-01 | $7700.00 | Window Closed / Lapsed |