Patent US3915898A successfully refreshed from Google Patents.
Patent US3518494A successfully refreshed from Google Patents.
US3518494A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Radiation resistant semiconductor device and method
Assignee: Signetics Corp
•
Filing: 1964-06-29
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Granted: 1970-06-30
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Expires: 1984-06-29
Abstract
No abstract record available.
Inventors
- 👤 Brian David James
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 21:59
CPC Classifications
H; H10; H10P; H10P95/00; H10P10/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
141 words
A SEMICONDUCTOR DEVICE, COMPRISING: (A) AT LEAST ONE ACTIVE CIRCUIT COMPONENT AT ONE PRINCIPAL SURFACE OF A SUBSTRATE HAVING TWO PRINCIPAL SURFACES THEREOF, SAID AT LEAST ONE ACTIVE CIRCUIT COMPONENT BEING COMPRISES OF AT LEAST TWO REGIONS OF OPPOSITE CONDUCTIVITY TYPE SEMICONDUCTOR MATERIAL WITH A P-N JUNCTION THEREBETWEEN, (B) OHMIC CONTACTS TO EACH OF SAID AT LEAST TWO REGIONS OF OPPOSITE CONDUCTIVITY TYPE SEMICONDUCTOR MATERIAL, (C) A CONTINUOUS LAYER OF INSULATING MATERIAL OVERLYING SAID AT LEAST ONE ACTIVE CIRCUIT COMPONENT AND SAID OHMIC CONTACTS, (D) A FIRST DEPOSITED METALLIZED FILM INTEGRAL WITH AND SUBSTANTIALLY COVERING THE ENTIRE TOP SURFACE OF SAID CONTINUOUS LAYER OF INSULATING MATERIAL, AND (E) A SECOND DEPOSITED METALIZED FILM INTEGRAL WITH AND SUBSTANTIALLY COVERING THE OTHER OF SAID PRINCIPAL SURFACES OF SAID SUBSTRATE, (F) SAID FIRST AND SECOND METALLIZED FILMS BEING MAINTAINED AT SUBSTANTIALLY THE SAME POTENTIAL.
Claim 2
Dependent Claim
141 words
A SEMICONDUCTOR DEVICE, COMPRISING: (A) AT LEAST ONE ACTIVE CIRCUIT COMPONENT AT ONE PRINCIPAL SURFACE OF A SUBSTRATE HAVING TWO PRINCIPAL SURFACES THEREOF, SAID AT LEAST ONE ACTIVE CIRCUIT COMPONENT BEING COMPRISES OF AT LEAST TWO REGIONS OF OPPOSITE CONDUCTIVITY TYPE SEMICONDUCTOR MATERIAL WITH A P-N JUNCTION THEREBETWEEN, (B) OHMIC CONTACTS TO EACH OF SAID AT LEAST TWO REGIONS OF OPPOSITE CONDUCTIVITY TYPE SEMICONDUCTOR MATERIAL, (C) A CONTINUOUS LAYER OF INSULATING MATERIAL OVERLYING SAID AT LEAST ONE ACTIVE CIRCUIT COMPONENT AND SAID OHMIC CONTACTS, (D) A FIRST DEPOSITED METALLIZED FILM INTEGRAL WITH AND SUBSTANTIALLY COVERING THE ENTIRE TOP SURFACE OF SAID CONTINUOUS LAYER OF INSULATING MATERIAL, AND (E) A SECOND DEPOSITED METALIZED FILM INTEGRAL WITH AND SUBSTANTIALLY COVERING THE OTHER OF SAID PRINCIPAL SURFACES OF SAID SUBSTRATE, (F) SAID FIRST AND SECOND METALLIZED FILMS BEING MAINTAINED AT SUBSTANTIALLY THE SAME POTENTIAL.
References Cited (Backward Citations)
US3158788A
Cited
US3205295A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1973-06-29 | 1973-12-29 | 1974-06-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1977-06-29 | 1977-12-29 | 1978-06-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1981-06-29 | 1981-12-29 | 1982-06-30 | $7700.00 | Window Closed / Lapsed |