Patent US3491433A successfully refreshed from Google Patents.
US3491433A
Expired / Lapsed
US
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Method of making an insulated gate semiconductor device
Assignee: NEC Corp
•
Filing: 1967-06-07
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Granted: 1970-01-27
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Expires: 1987-06-07
Abstract
No abstract record available.
Inventors
- 👤 Nobuo Kawamura
- 👤 Takeo Ohyachi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 21:30
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10D; H10D99/00; H10W72/00; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
US3424956A
Cited
US3432918A
Cited
US3398067A
Cited
US3406043A
Cited
US3430335A
Cited
US3426422A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1973-01-26 | 1973-07-28 | 1974-01-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1977-01-26 | 1977-07-28 | 1978-01-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1981-01-26 | 1981-07-28 | 1982-01-27 | $7700.00 | Window Closed / Lapsed |