US3452423A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Segmenting lead telluride-silicon germanium thermoelements
Assignee: National Aeronautics and Space Administration
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Filing: 1966-09-30
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Granted: 1969-07-01
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Expires: 1986-09-30
Abstract
No abstract record available.
Inventors
- 👤 Martin Weinstein
- 👤 Herbert E Bates
- 👤 Joseph Epstein
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 19:16
CPC Classifications
H; H10; H10N; H10N10/00; H10N10/80; H10N10/81; H10N10/817; Y; Y10; Y10S; Y10S228/00; Y10S228/903; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12674
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
117 words
A METHOD OF SEGMENTING THERMOELECTRIC MATERIALS OF COMPLEMENTARY OPERATIONAL CHARACTERISTICS COMPRISING: PROVIDING A SILICON-GERMANIUM THERMOELECTRIC ELEMENT HAVING A TUNGSTEN ELECTRODE BONDED TO ONE END THEREOF, PROVIDING A LEAD-TELLURIDE THERMOELECTRIC ELEMENT HAVING AN OPERATIONAL RANGE DIFFERENT FROM BUT COMPLEMENTARY TO THAT OF THE SILICON-GERMANIUM ELEMENT, LAPPING THE ELECTRODE SURFACE OF THE SILICON GERMANIUM ELEMENT AND AN END SURFACE OF THE LEAD-TELLURIDE ELEMENT TO FORM A FLAT INTERFACE THEREBETWEEN, ASSEMBLING THE SILICON-GERMANIUM AND LEAD-TELLURIDE ELEMENTS SO THAT THE LAPPED SURFACES ARE IN CLOSE CONTACT, AND HEATING THE ASSEMBLY TO A TEMPERATURE OF FROM 840* C. TO 865*C. FOR A PERIOD OF TIME SUFFICIENT TO BOND THE TUNGSTEN ELECTRODE TO THE LEAD-TELLURIDE THERMOELECTRIC ELEMENT TO FORM A STABLE, LOW-RESISTANCE BOND.
Claim 2
Independent Claim
117 words
A METHOD OF SEGMENTING THERMOELECTRIC MATERIALS OF COMPLEMENTARY OPERATIONAL CHARACTERISTICS COMPRISING: PROVIDING A SILICON-GERMANIUM THERMOELECTRIC ELEMENT HAVING A TUNGSTEN ELECTRODE BONDED TO ONE END THEREOF, PROVIDING A LEAD-TELLURIDE THERMOELECTRIC ELEMENT HAVING AN OPERATIONAL RANGE DIFFERENT FROM BUT COMPLEMENTARY TO THAT OF THE SILICON-GERMANIUM ELEMENT, LAPPING THE ELECTRODE SURFACE OF THE SILICON GERMANIUM ELEMENT AND AN END SURFACE OF THE LEAD-TELLURIDE ELEMENT TO FORM A FLAT INTERFACE THEREBETWEEN, ASSEMBLING THE SILICON-GERMANIUM AND LEAD-TELLURIDE ELEMENTS SO THAT THE LAPPED SURFACES ARE IN CLOSE CONTACT, AND HEATING THE ASSEMBLY TO A TEMPERATURE OF FROM 840* C. TO 865*C. FOR A PERIOD OF TIME SUFFICIENT TO BOND THE TUNGSTEN ELECTRODE TO THE LEAD-TELLURIDE THERMOELECTRIC ELEMENT TO FORM A STABLE, LOW-RESISTANCE BOND.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1972-06-30 | 1972-12-30 | 1973-07-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1976-06-30 | 1976-12-30 | 1977-07-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1980-06-30 | 1980-12-30 | 1981-07-01 | $7700.00 | Window Closed / Lapsed |